RFMA0912-1W Datasheet, PDF (1/3 Pages) Excelics Semiconductor, Inc. – 9.50 - 11.70 GHz Power Amplifier MMIC

UPDATED 2/01/2005
RFMA0912-1W
9.50 – 11.70 GHz Power Amplifier MMIC
FEATURES
• 9.50 – 11.70GHz Operating Frequency Range
• 30.0dBm Output Power at 1dB Compression
• 31.0 dB Typical Power Gain @ 1dB Gain Compression
• -41dBc Typical OIM3 @ each tone Pout 19.0dBm
Excelics
RFMA0912
-1W
APPLICATIONS
• Point-to-point and point-to-multipoint radio
• Military Radar Systems
Different Packages Are Available
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T_a = 25 °C, 50 ohm, Vdd=7V, Vgg=-5V)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN TYP MAX
F
Operating Frequency Range
9.5
11.7
P1dB
Output Power at 1dB Gain Compression
29
30
G1dB
OIMD3
Gain @1dB gain compression
Output 3^rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 19dBm
28
31
-38
-41
Input RL Input Return Loss
-10
-8
Output RL Output Return Loss
-6
Idd
Drain Current
900 1050
Vdd
Drain Supply Voltage
7
8
Vgg
Gate Supply Voltage
-5
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
7
7.5
Tb
Operating Base Plate Temperature
- 30
+ 80
UNITS
GHz
dBm
dB
dBc
dB
dB
mA
V
V
o_C/W
ºC
MAXIMUM RATINGS AT 25°C
SYMBOL
CHARACTERISTIC
Vdd
Drain Supply Voltage
Vgg
Gate Supply Voltage
ABSOLUTE
12V
-8V
CONTINUOUS^1,2
8V
-3 V
Idd
Drain Current
Idss
1.9A
Igg
Gate Current
132mA
22 mA
P_IN
Input Power
20dBm
@ 3dB compression
T_CH
Channel Temperature
175°C
150°C
T_STG
Storage Temperature
-65/175°C
-65/150°C
P_T
Total Power Dissipation
15.0W
12.6W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation Vdd*Idd < (T_CH –T_HS)/R_TH; where T_HS = ambient temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
page 1 of 3
Revised February 2005