EPB025A Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Low Noise High Gain Heterojunction FET

Excelics
EPB025A
DATA SHEET
Low Noise High Gain Heterojunction FET
• TYPICAL 0.8dB NOISE FIGURE AND 11.0dB ASSOCIATED
GAIN AT 12GHz
• 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES
SUPER LOW NOISE, HIGH GAIN AND HIGH
RELIABILITY
• Idss SORTED IN 5mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
NF
Noise Figure
Vds=2V, Ids=15mA
f = 12GHz
Ga
Associated Gain
Vds=2V, Ids=15mA
f = 12GHz
P_1dB
Output Power at 1dB Compression
Vds=3V, Ids=25mA
f=12GHz
f=18GHz
G_1dB
Gain at 1dB Compression
Vds=3V, Ids=25mA
f=12GHz
f=18GHz
Idss
Saturated Drain Current Vds=2V, Vgs=0V
420
50 104
D
40
SG
D
GS
48
260
90
59 50 78
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
MIN
10.0
20
TYP
0.80
11.0
15.0
15.0
13.0
11.0
50
MAX UNIT
1.0
dB
dB
dBm
dB
80 mA
Gm
Transconductance
Vds=2V, Vgs=0V
50 80
mS
Vp
Pinch-off Voltage
Vds=2V, Ids=1.0mA
-1.0 -2.5 V
BVgd
Drain Breakdown Voltage Igd=10uA
-3
-5
V
BVgs
Rth
Source Breakdown Voltage Igs=10uA
Thermal Resistance (Au-Sn Eutectic Attach)
-3
-5
155
V
o_C/W
MAXIMUM RATINGS AT 25^OC
SYMBOLS PARAMETERS
ABSOLUTE¹ CONTINUOUS²
Vds
Drain-Source Voltage
5V
3V
Vgs
Gate-Source Voltage
-3V
-3V
Ids
Drain Current
Idss
Idss
Igsf
Forward Gate Current
2mA
0.3mA
Pin
Input Power
12dBm
Tch
Channel Temperature
175^oC
Tstg
Storage Temperature
-65/175^oC
@ 1dB Compression
150^oC
-65/150^oC
Pt
Total Power Dissipation
880mW
730mW
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com