EPB025A-70 Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – Low Noise High Gain Heterojunction FET

Excelics
EPB025A-70
DATA SHEET
Low Noise High Gain Heterojunction FET
• NON-HERMETIC LOW COST CERAMIC 70 mil PACKAGE
• TYPICAL 0.85dB NOISE FIGURE AND 10.5dB
ASSOCIATED GAIN AT 12GHz
• 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE
44
19
20
4
D
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES SUPER LOW NOISE, HIGH GAIN AND HIGH
S
S
RELIABILITY
G
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
All Dimensions In mils
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN TYP MAX UNIT
NF
Noise Figure
Vds=2V, Ids=15mA
f = 12GHz
0.85 1.0
dB
Ga
Associated Gain
Vds=2V, Ids=15mA
f = 12GHz
9.5 10.5
dB
P_1dB
Output Power at 1dB Compression
Vds=3V, Ids=25mA
f=12GHz
f=18GHz
15.0
15.0
dBm
G_1dB
Gain at 1dB Compression
Vds=3V, Ids=25mA
f=12GHz
12.0
dB
f=18GHz
9.5
Idss
Saturated Drain Current Vds=2V, Vgs=0V
20 50 80 mA
Gm
Transconductance
Vds=2V, Vgs=0V
50 80
mS
Vp
Pinch-off Voltage
Vds=2V, Ids=1.0mA
-1.0 -2.5 V
BVgd
Drain Breakdown Voltage Igd=10uA
-3
-5
V
BVgs
Source Breakdown Voltage Igs=10uA
Rth
Thermal Resistance
*_{Overall Rth depends on case mounting}
-3
-5
370^*
V
o_C/W
MAXIMUM RATINGS AT 25^OC
SYMBOLS PARAMETERS
ABSOLUTE¹ CONTINUOUS²
Vds
Drain-Source Voltage
5V
3V
Vgs
Gate-Source Voltage
-3V
-3V
Ids
Drain Current
Idss
50mA
Igsf
Forward Gate Current
2mA
0.3mA
Pin
Input Power
12dBm
Tch
Channel Temperature
175^oC
Tstg
Storage Temperature
-65/175^oC
@ 1dB Compression
150^oC
-65/150^oC
Pt
Total Power Dissipation
370mW
310mW
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com