EPB018A5 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – Super Low Noise High Gain Heterojunction FET

Excelics
EPB018A5/A7/A9
DATA SHEET
Super Low Noise High Gain Heterojunction FET
• VERY HIGH fmax: 120GHz
• TYPICAL 0.50~0.90dB NOISE FIGURE AND 12.0~13.0dB
ASSOCIATED GAIN AT 12GHz
• 0.3 X 180 MICRON RECESSED “ MUSHROOM” GATE
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL HETEROJUNCTION PROFILE
PROVIDES SUPER LOW NOISE, HIGH GAIN AND HIGH
RELIABILITY
• Idss SORTED IN 5 mA PER BIN RANGE


'
 ^{6 * 6}
  

 ^
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
SYMBOLS
NF
Ga
P_1dB
G_1dB
PARAMETERS/TEST CONDITIONS
Noise Figure, f=12GHz
Vds=2V, Ids=15mA
Associated Gain, f=12GHz
Vds=2V, Ids=15mA
Output Power at 1dB Compression
Vds=3V, Ids=25mA
Gain at 1dB Compression
Vds=3V, Ids=25mA
EPB018A5
EPB018A7
EPB018A9
EPB018A5
EPB018A7
EPB018A9
f=12GHz
f=18GHz
f=12GHz
f=18GHz
MIN
12.0
11.5
11.0
TYP
0.50
0.65
0.95
13.0
12.5
12.0
15.0
15.0
15.0
13.0
MAX
0.60
0.80
1.20
UNIT
dB
dB
dBm
dB
Idss
Saturated Drain Current Vds=2V, Vgs=0V
15
45
80 mA
Gm
Transconductance Vds=2V, Vgs=0V
50 90
mS
Vp
Pinch-off Voltage Vds=2V, Ids=1.0mA
-0.8 -2.5 V
BVgd
Drain Breakdown Voltage Igd=10uA
-3
-6
V
BVgs
Rth
Source Breakdown Voltage Igs=10uA
Thermal Resistance (Au-Sn Eutectic Attach)
-3
-6
185
V
o_C/W
MAXIMUM RATINGS AT 25^OC
SYMBOLS PARAMETERS
ABSOLUTE¹
CONTINUOUS²
Vds
Drain-Source Voltage
5V
4V
Vgs
Gate-Source Voltage
-3V
-2V
Ids
Drain Current
Idss
Idss
Igsf
Forward Gate Current
2mA
0.3mA
Pin
Input Power
12dBm
Tch
Channel Temperature
175^oC
Tstg
Storage Temperature
-65/175^oC
@1dB Compression
150^oC
-65/150^oC
Pt
Total Power Dissipation
740mW
625mW
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com