EPA960CR-180F Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – High Efficiency Heterojunction Power FET

ISSUED 02/06/2006
EPA960CR-180F
High Efficiency Heterojunction Power FET
FEATURES
• Non-Hermetic 180mil Metal Flange Package
• +38.5 dBm Typical Output Power
• 17.0 dB Typical Power Gain at 2GHz
• 0.4 x 9600 Micron Recessed “Mushroom” Gate
• Si₃N₄ Passivation
• Advanced Epitaxial Heterojunction Profile
Provides Extra High Power Efficiency and
High Reliability
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T_a = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS¹
P_1dB
G_1dB
PAE
I_DSS
Output Power at 1dB Compression
f = 2GHz
V_DS = 8 V, I_DS ≈ 50% I_DSS
f = 4GHz
Gain at 1dB Compression
f = 2GHz
V_DS = 8 V, I_DS ≈ 50% I_DSS
f = 4GHz
Power Added Efficiency at 1dB Compression
V_DS = 8 V, I_DS ≈ 50% I_DSS
f = 2GHz
Saturated Drain Current
V_DS = 3 V, V_GS = 0 V
G_M
Transconductance
V_DS = 3 V, V_GS = 0 V
V_P
Pinch-off Voltage
V_DS = 3 V, I_DS = 28 mA
BV_GD Drain Breakdown Voltage
I_GD = 9.6 mA
BV_GS Source Breakdown Voltage I_GS = 9.6 mA
R_TH
Thermal Resistance
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25^OC
SYMBOLS
PARAMETERS
ABSOLUTE¹
Vds
Drain-Source Voltage
12V
Vgs
Gate-Source Voltage
-8V
Igsf
Forward Gate Current
86.4 mA
Igsr
Reversed Gate Current
14.4 mA
Pin
Tch
Tstg
Input Power
Channel Temperature
Storage Temperature
36 dBm
175^oC
-65/175^oC
Pt
Total Power Dissipation
25 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
MIN
37.0
15.5
1760
1920
-11
-7
TYP
38.5
38.5
17.0
12.0
50
2880
3120
-1.0
-15
-14
6*
MAX
3760
-2.5
UNITS
dBm
dB
%
mA
mS
V
V
V
o_C/W
CONTINUOUS²
8V
-3V
28.8 mA
4.8 mA
@ 3dB Compression
175^oC
-65/175^oC
25 W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
page 1 of 2
Revised February 2006