EPA680A Datasheet, PDF (1/3 Pages) Excelics Semiconductor, Inc. – High Efficiency Heterojunction Power FET

UPDATED 05/02/2006
EPA680A/EPA680AV
High Efficiency Heterojunction Power FET
FEATURES
• +36.5dBm TYPICAL OUTPUT POWER
• 6.5dB TYPICAL POWER GAIN FOR EPA680A
AND 8.0dB FOR EPA680AV AT 12GHz
• 0.4 X 6800 MICRON RECESSED “MUSHROOM” GATE ⁴⁰
• Si₃N₄ PASSIVATION AND PLATED HEAT SINK
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES
HIGH POWER EFFICIENCY AND RELIABILITY
• Idss SORTED IN 160mA PER BIN RANGE
1320
60
231
D
D
D
D
G
G
G
G
135
201
50
Chip Thickness: 45 ± 15 microns
: Via Hole
No Via Hole For EPA680A
All Dimensions In Microns
48
440
100
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P_1dB
G_1dB
PAE
Idss
Gm
Vp
BVgd
BVgs
Rth
Output Power at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
Saturated Drain Current
Vds=3V, Vgs=0V
Transconductance
Vds=3V, Vgs=0V
Pinch-off Voltage
Vds=3V,Ids=20mA
Drain Breakdown Voltage
Igd=6.8mA
Source Breakdown Voltage Igs=6.8mA
Thermal Resistance (Au-Sn Eutectic Attach)
Caution! ESD sensitive device.
EPA680A
MIN TYP MAX
EPA680AV
MIN TYP MAX
UNIT
35.5 36.5
35.5 36.5
dBm
5.5 6.5
7
8
dB
33
36
%
1250
1360
-13
-7
2050
2150
-1.0
-15
-14
6
2690
-2.5
1250
1360
-13
-7
2050
2150
-1.0
-15
-14
5.5
2690
-2.5
mA
mS
V
V
V
o_C/W
MAXIMUM RATINGS AT 25^OC
SYMBOLS
PARAMETERS
EPA680A
ABSOLUTE¹
CONTINUOUS²
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-5V
-3V
Igsf
Forward Gate Current
30.6 mA
10.2 mA
Igsr
Reserve Gate Current
-5.1 mA
-1.7 mA
Pin
Tch
Tstg
Input Power
Channel Temperature
Storage Temperature
33.5 dBm
175^oC
-65/175^oC
@ 3dB Compression
175^oC
-65/175^oC
Pt
Total Power Dissipation
23 W
23 W
Note:
1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
EPA680AV
ABSOLUTE¹
CONTINUOUS²
12V
8V
-5V
-3V
30.6 mA
10.2 mA
-5.1 mA
-1.7 mA
33.5 dBm
175^oC
-65/175^oC
@ 3dB Compression
175^oC
-65/175^oC
25 W
25 W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
page 1 of 3
Revised May 2006