EPA680A-180F Datasheet, PDF (1/1 Pages) Excelics Semiconductor, Inc. – High Efficiency Heterojunction Power FET

ISSUED 05/02/2006
EPA680A-180F
High Efficiency Heterojunction Power FET
FEATURES
• Non-Hermetic 180mil Metal Flange Package
• +36.5 dBm Typical Output Power
• 16.0 dB Typical Power Gain at 2GHz
• 0.4 x 6800 Micron Recessed “Mushroom” Gate
• Si₃N₄ Passivation
• Advanced Epitaxial Heterojunction Profile
Provides Extra High Power Efficiency and
High Reliability
ELECTRICAL CHARACTERISTICS (T_a = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS¹
P_1dB
Output Power at 1dB Compression
V_DS = 8 V, I_DS ≈ 50% I_DSS
f = 2GHz
f = 4GHz
G_1dB
PAE
I_DSS
Gain at 1dB Compression
f = 2GHz
V_DS = 8 V, I_DS ≈ 50% I_DSS
f = 4GHz
Power Added Efficiency at 1dB Compression
V_DS = 8 V, I_DS ≈ 50% I_DSS
f = 2GHz
Saturated Drain Current
V_DS = 3 V, V_GS = 0 V
G_M
Transconductance
V_DS = 3 V, V_GS = 0 V
V_P
Pinch-off Voltage
V_DS = 3 V, I_DS = 20 mA
BV_GD Drain Breakdown Voltage
I_GD = 6.8 mA
BV_GS Source Breakdown Voltage I_GS = 6.8 mA
R_TH
Thermal Resistance
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25^OC
SYMBOLS
PARAMETERS
ABSOLUTE¹
Vds
Drain-Source Voltage
12V
Vgs
Gate-Source Voltage
-5V
Igsf
Forward Gate Current
30.6 mA
Igsr
Reversed Gate Current
-5.1 mA
Pin
Tch
Tstg
Input Power
Channel Temperature
Storage Temperature
33.5 dBm
175^oC
-65/175^oC
Pt
Total Power Dissipation
20 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
MIN
35.0
14.5
1250
1360
-13
-7
TYP
36.5
36.5
16.0
11.0
44
2050
2150
-1.0
-15
-14
7*
MAX
2690
-2.5
UNITS
dBm
dB
%
mA
mS
V
V
V
o_C/W
CONTINUOUS²
8V
-3V
10.2 mA
-1.7 mA
@ 3dB Compression
175^oC
-65/175^oC
20 W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
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Revised May 2006