EPA480C Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – High Efficiency Heterojunction Power FET

Excelics
EPA480C
DATA SHEET
High Efficiency Heterojunction Power FET
• +36.0dBm TYPICAL OUTPUT POWER
• 19.0dB TYPICAL POWER GAIN AT 2GHz
• 0.5 X 4800 MICRON RECESSED
“MUSHROOM” GATE
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
• Idss SORTED IN 120mA PER BIN RANGE
680
104 160
D
D
72
620
155
75
S
G
S
G
S
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
100 94
120
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN TYP MAX UNIT
P_1dB
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
f= 2GHz
f= 4GHz
34.0 36.0
36.0
dBm
G_1dB
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
f= 2GHz
17.5 19.0
dB
f= 4GHz
14.0
PAE
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=2GHz
%
55
Idss
Saturated Drain Current Vds=3V, Vgs=0V
880 1440 1880 mA
Gm
Transconductance
Vds=3V, Vgs=0V
960 1560
mS
Vp
Pinch-off Voltage
Vds=3V, Ids=14mA
-1.0 -2.5 V
BVgd
Drain Breakdown Voltage Igd=4.8mA
-11 -15
V
BVgs
Rth
Source Breakdown Voltage Igs=4.8mA
Thermal Resistance (Au-Sn Eutectic Attach)
-7 -14
12
V
o_C/W
MAXIMUM RATINGS AT 25^OC
SYMBOLS PARAMETERS
ABSOLUTE¹ CONTINUOUS²
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-3V
Ids
Drain Current
Idss
1.2A
Igsf
Forward Gate Current
240mA
40mA
Pin
Input Power
Tch
Channel Temperature
Tstg
Storage Temperature
33dBm
175^oC
-65/175^oC
@ 3dB Compression
150^oC
-65/150^oC
Pt
Total Power Dissipation
11.4 W
9.5 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com