EPA480C-180F Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – High Efficiency Heterojunction Power FET

Excelics
PRELIMINARY DATA SHEET
High Efficiency Heterojunction Power FET
EPA480C-180F
• NON-HERMETIC 180MIL METAL FLANGE
PACKAGE
• +36.0dBm TYPICAL OUTPUT POWER
• 18.0dB TYPICAL POWER GAIN AT 2GHz
• 0.4 X 4800 MICRON RECESSED
“MUSHROOM” GATE
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P_1dB
G_1dB
PAE
Output Power at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
Gain at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=2GHz
Idss
Saturated Drain Current Vds=3V, Vgs=0V
All Dimensions In Mils
MIN
34.0
16.5
880
TYP
36.0
36.0
18.0
13.0
52
1440
MAX UNIT
dBm
dB
%
1880 mA
Gm
Transconductance
Vds=3V, Vgs=0V
960 1560
mS
Vp
Pinch-off Voltage
Vds=3V, Ids=14mA
-1.0 -2.5 V
BVgd
Drain Breakdown Voltage Igd=4.8mA
-11 -15
V
BVgs
Source Breakdown Voltage Igs=4.8mA
-7 -14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
12*
o_C/W
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25^OC
SYMBOLS PARAMETERS
ABSOLUTE¹
CONTINUOUS²
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-3V
Ids
Drain Current
Idss
1.2A
Igsf
Forward Gate Current
240mA
40mA
Pin
Input Power
Tch
Channel Temperature
Tstg
Storage Temperature
33dBm
175^oC
-65/175^oC
@ 3dB Compression
150^oC
-65/150^oC
Pt
Total Power Dissipation
11.4 W
9.5 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com