EPA480B Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – High Efficiency Heterojunction Power FET

UPDATED: 09/27/2007
EPA480B/EPA480BV
High Efficiency Heterojunction Power FET
• +35.5dBm TYPICAL OUTPUT POWER
• 7.5dB TYPICAL POWER GAIN FOR EPA480B AND
9.0dB FOR EPA480BV AT 12GHz
• 0.3X 4800 MICRON RECESSED “MUSHROOM” GATE
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
• EPA480BV WITH VIA HOLE SOURCE GROUNDING
• Idss SORTED IN 120mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
SYMBOLS PARAMETERS/TEST CONDITIONS
P_1dB
G_1dB
PAE
Idss
Output Power at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss
f=18GHz
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
Saturated Drain Current Vds=3V, Vgs=0V
Gm
Transconductance
Vds=3V, Vgs=0V
Vp
Pinch-off Voltage
Vds=3V, Ids=14mA
BVgd
Drain Breakdown Voltage Igd=4.8mA
BVgs
Source Breakdown Voltage Igs=4.8mA
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
MIN
34.0
6.0
880
960
-13
-7
Chip Thickness: 45 ± 13 microns
All Dimensions In Microns
No Via Hole For EPA480B
EPA480B
TYP MAX
35.5
7.5
EPA480BV
MIN TYP MAX
34.0 35.5
35.5
7.5 9.0
UNIT
dBm
dB
40
45
%
1440 1880 880 1440 1880 mA
1520
960 1520
mS
-1.0
-2.5
-1.0 -2.5
V
-15
-13 -15
V
-14
-7
-14
V
10
8
o_C/W
MAXIMUM RATINGS AT 25^OC
SYMBOLS
PARAMETERS
EPA480B
ABSOLUTE¹ CONTINUOUS²
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-3V
Ids
Drain Current
Idss
1.4A
Igsf
Forward Gate Current
240mA
40mA
Pin
Input Power
Tch
Channel Temperature
stg
Storage Temperature
33dBm
175^oC
-65/175^oC
@ 3dB Compression
150^oC
-65/150^oC
Pt
Total Power Dissipation
14W
11W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
EPA480BV
ABSOLUTE¹ CONTINUOUS²
12V
-8V
Idss
240mA
33dBm
175^oC
-65/175^oC
17W
8V
-3V
1.75A
40mA
@ 3dB Compression
150^oC
-65/150^oC
14W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
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September 2007