EPA160B-100P Datasheet, PDF (1/1 Pages) Excelics Semiconductor, Inc. – High Efficiency Heterojunction Power FET

UPDATED 05/05/2006
EPA160B-100P
High Efficiency Heterojunction Power FET
• NON-HERMETIC 100MIL METAL FLANGE PACKAGE
• +31.0dBm TYPICAL OUTPUT POWER
• 10dB TYPICAL POWER GAIN AT 12GHz
• 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE
• Si₃N₄ PASSIVATION
G
• ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY AND HIGH RELIABILITY
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
SYMBOLS
P_1dB
G_1dB
PAE
Idss
Gm
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
f= 12GHz
f= 18GHz
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
f= 12GHz
f= 18GHz
Power Added Efficiency at 1dB Compression
Vds=8 V, Ids=50% Idss
f=12GHz
Saturated Drain Current
Vds=3V, Vgs=0V
Transconductance
Vds=3V, Vgs=0V
MIN
29.0
8.5
290
320
Vp
Pinch-off Voltage
Vds=3V, Ids=4.5mA
BVgd Drain Breakdown Voltage
Igd=1.6mA
-13
BVgs
Source Breakdown Voltage
Igs=1.6mA
-7
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
Note: * Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25^OC
SYMBOLS
PARAMETERS
ABSOLUTE¹
Vds
Drain-Source Voltage
12V
Vgs
Gate-Source Voltage
-5V
Igsf
Forward Gate Current
7.2 mA
Igsr
Reserve Gate Current
-1.2 mA
Pin
Tch
Tstg
Input Power
Channel Temperature
Storage Temperature
28 dBm
175^oC
-65/175^oC
Pt
Total Power Dissipation
4.0 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
D
TYP
31.0
31.0
10.0
5.0
41
480
500
-1.0
-15
-14
35*
MAX
660
-2.5
UNIT
dBm
dB
%
mA
mS
V
V
V
ºC/W
CONTINUOUS²
8V
-3V
2.4 mA
-0.4 mA
@ 3dB Compression
175^oC
-65/175^oC
4.0 W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
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Revised May 2006