EPA160A-100P Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – High Efficiency Heterojunction Power FET

UPDATED 02/15/2005
EPA160A-100P
High Efficiency Heterojunction Power FET
• NON-HERMETIC 100MIL METAL FLANGE PACKAGE
• +31.0dBm TYPICAL OUTPUT POWER
• 11.5dB TYPICAL POWER GAIN AT 12GHz
• 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE
• Si₃N₄ PASSIVATION
G
D
• ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN TYP MAX UNIT
Output Power at 1dB Compression
P_1dB
Vds=8V, Ids=50% Idss
f= 12GHz
f= 18GHz
29.0
31.0
31.0
dBm
Gain at 1dB Compression
G_1dB
Vds=8V, Ids=50% Idss
f= 12GHz
f= 18GHz
9.5
11.5
8.0
dB
PAE
Power Added Efficiency at 1dB Compression
Vds=8 V, Ids=50% Idss
f=12GHz
41
%
Idss
Saturated Drain Current
Vds=3V, Vgs=0V
290
480
660
mA
Gm
Transconductance
Vds=3V, Vgs=0V
320
500
mS
Vp
Pinch-off Voltage
Vds=3V, Ids=4.5mA
-1.0
-2.5
V
BVgd Drain Breakdown Voltage
Igd=1.6mA
-13
-15
V
BVgs
Source Breakdown Voltage
Igs=1.6mA
-7
-14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
33*
ºC/W
• Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION AT 25°C
SYMBOLS
PARAMETERS
CONTINUOUS^1,2
Vds
Drain-Source Voltage
8V
Vgs
Gate-Source Voltage
-3V
Ids
Drain Current
435mA
Igsf
Forward Gate Current
14mA
Pin
Input Power
@ 3dB Compression
Tch
Channel Temperature
150 ^oC
Tstg
Storage Temperature
-65 to +150 ^oC
Pt
Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
3.4W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
page 1 of 2
Revised February 2005