EPA120B Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – High Efficiency Heterojunction Power FET

Excelics EPA120B/EPA120BV
DATA SHEET
High Efficiency Heterojunction Power FET
550
• +29.5dBm TYPICAL OUTPUT POWER
• 9.0dB TYPICAL POWER GAIN FOR EPA120B AND
10.5dB FOR EPA120BV AT 18GHz
• 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
• EPA120BV WITH VIA HOLE SOURCE GROUNDING
• Idss SORTED IN 30mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
50 156
D
D
48
40
G
G
350
100
95 50 120
Chip Thickness: 75 ± 20 microns
All Dimensions In Microns
: Via Hole
No Via Hole For EPA120B
SYMBOLS
PARAMETERS/TEST CONDITIONS
P1dB
G1dB
PAE
Idss
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
f=18GHz
f=12GHz
f=18GHz
f=12GHz
Saturated Drain Current Vds=3V, Vgs=0V
EPA120B
MIN
TYP MAX
28.0
29.5
29.5
10.0
11.5
9.0
45
220
360
500
EPA120BV
MIN TYP MAX
28.0 29.5
29.5
11.5 13.0
10.5
UNIT
dBm
dB
46
%
220 360 500 mA
Gm
Transconductance
Vds=3V, Vgs=0V
240
380
240 380
mS
Vp
Pinch-off Voltage
Vds=3V, Ids=3.0mA
-1.0
-2.5
-1.0 -2.5
V
BVgd
Drain Breakdown Voltage Igd=1.2mA
-11
-15
-11 -15
V
BVgs
Rth
Source Breakdown Voltage Igs=1.2mA
Thermal Resistance (Au-Sn Eutectic Attach)
-7
-14
40
-7
-14
30
V
o_C/W
MAXIMUM RATINGS AT 25^OC
SYMBOLS
PARAMETERS
EPA120B
EPA120BV
ABSOLUTE¹
CONTINUOUS²
ABSOLUTE¹
CONTINUOUS²
Vds
Drain-Source Voltage
12V
8V
12V
8V
Vgs
Gate-Source Voltage
-8V
-3V
-8V
-3V
Ids
Drain Current
Idss
355mA
Idss
470mA
Igsf
Forward Gate Current
60mA
10mA
60mA
10mA
Pin
Input Power
Tch
Channel Temperature
Tstg
Storage Temperature
27dBm
175^oC
-65/175^oC
@ 3dB
Compression
150^oC
-65/150^oC
27dBm
175^oC
-65/175^oC
@ 3dB
Compression
150^oC
-65/150^oC
Pt
Total Power Dissipation
3.4W
2.8W
4.5W
3.8W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com