EPA1200A Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – High Efficiency Heterojunction Power FET

Excelics
EPA1200A
DATA SHEET
High Efficiency Heterojunction Power FET
• +39.5dBm TYPICAL OUTPUT POWER
• 18.0dB TYPICAL POWER GAIN AT 2GHz
 

• 0.4 X 12,000 MICRON RECESSED
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'
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“MUSHROOM” GATE
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL
HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
 ⁶ *
6
*
6
*
6
*
6
*6
• Idss SORTED IN 300mA PER BIN RANGE
  
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
Chip Thickness: 50 ± 10 microns
(with > 20 microns Gold Plated Heat Sink (PHS) )
All Dimensions In Microns
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN TYP MAX UNIT
P_1dB
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
f= 2GHz
f= 4GHz
38.0 39.5
39.5
dBm
G_1dB
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
f= 2GHz
f= 4GHz
16.5 18.0
13.0
dB
PAE
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=2GHz
43
%
Idss
Saturated Drain Current Vds=3V, Vgs=0V
2200 3600 4700 mA



Gm
Transconductance
Vds=3V, Vgs=0V
2400 3800
mS
Vp
Pinch-off Voltage
Vds=3V, Ids=36mA
-1.0 -2.5 V
BVgd
Drain Breakdown Voltage Igd=12mA
-11 -15
V
BVgs
Source Breakdown Voltage Igs=12mA
-7 -14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
4
o_C/W
MAXIMUM RATINGS AT 25^OC
SYMBOLS PARAMETERS
ABSOLUTE¹
CONTINUOUS²
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-3V
Ids
Drain Current
Idss
3.5A
Igsf
Forward Gate Current
600mA
100mA
Pin
Input Power
37dBm
Tch
Channel Temperature
175^oC
Tstg
Storage Temperature
-65/175^oC
@ 3dB Compression
150^oC
-65/150^oC
Pt
Total Power Dissipation
34 W
28 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com