EPA030C Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – High Efficiency Heterojunction Power FET

UPDATED 10/24/2006
EPA030C/EPA030CV
High Efficiency Heterojunction Power FET
FEATURES
• +23dBm TYPICAL OUTPUT POWER
• 11dB TYPICAL POWER GAIN FOR EPA030C
AND 12.0dB FOR EPA030CV AT 18GHz
• 0.3 X 300 MICRON RECESSED “MUSHROOM” GATE
• Si₃N₄ PASSIVATION AND PLATED HEAT SINK
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES
HIGH POWER EFFICIENCY AND RELIABILITY
• EPA030CV WITH VIA HOLE SOURCE GROUNDING
• Idss SORTED IN 10mA PER BIN RANGE
Chip Thickness: 75 ± 13 microns (EPA030C)
Chip Thickness: 85 ± 15 microns (EPA030CV)
: Via Hole
No Via Hole For EPA030C
ALL DIMENSIONS IN MICRONS
ELECTRICAL CHARACTERISTICS (T_a = 25°C)
Caution! ESD sensitive device.
SYMBOLS
PARAMETERS/TEST CONDITIONS
EPA030C
EPA030CV
UNIT
MIN TYP MAX MIN TYP MAX
P_1dB
G_1dB
PAE
Output Power at 1dB Compression
V_DS = 8V, I_DS ≈ 50% I_DSS
f = 12GHz
f = 18GHz
Gain at 1dB Compression
V_DS = 8V, I_DS ≈ 50% I_DSS
f = 12GHz
f = 18GHz
Power Added Efficiency at 1dB Compression
V_DS = 8V, I_DS ≈ 50% I_DSS
f = 12GHz
21.0
12.0
23.0
23.0
13.5
11.0
45
21.0 23.0
23.0
12.5 14.0
12.0
46
dBm
dB
%
I_DSS
Saturated Drain Current V_DS = 3V, V_GS = 0V
50
90 130 50
90 130 mA
G_M
V_P
BV_GD
Transconductance
V_DS = 3V, V_GS = 0V
60
95
60
95
mS
Pinch-off Voltage
V_DS = 3 V, I_DS = 1.0 mA
-1.0 -2.5
-1.0 -2.5
V
Drain Breakdown Voltage
I_GD = 1.0mA
-13 -15
-13 -15
V
BV_GS
R_th
Source Breakdown Voltage
I_GS = 1.0mA
Thermal Resistance(Au-Sn Eutectic Attach)
-7
-14
125
-7
-14
95
V
o_C/W
MAXIMUM RATINGS AT 25^OC
SYMBOLS
PARAMETERS
EPA030C
ABSOLUTE¹ CONTINUOUS²
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
Igf
Forward Gate Current
10V
-5V
1.4mA
8V
-3V
0.5mA
Igr
Reverse Gate Current
-0.2mA
-0.1mA
Pin
Tch
Tstg
Input Power
Channel Temperature
Storage Temperature
20dBm
175^oC
-65/175^oC
@ 3dB Compression
175^oC
-65/175^oC
Pt
Total Power Dissipation
1.1W
1.1W
Note:
1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
EPA030CV
ABSOLUTE¹
10V
CONTINUOUS²
8V
-5V
-3V
1.4mA
0.5mA
-0.2mA
-0.1mA
20dBm
175^oC
-65/175^oC
@ 3dB Compression
175^oC
-65/175^oC
1.5W
1.5W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
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Revised October 2006