EPA018B Datasheet, PDF (1/3 Pages) Excelics Semiconductor, Inc. – High Efficiency Heterojunction Power FET

EPA018B
ISSUED 11/01/2007
High Efficiency Heterojunction Power FET
FEATURES
• VERY HIGH fmax: 120GHz
• +20.0dBm TYPICAL OUTPUT POWER
• 13.0dB TYPICAL POWER GAIN AT 18 GHz
• TYPICAL 0.75dB NOISE FIGURE AND 12.5dB
ASSOCIATED GAIN AT 12GHz
• 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
• Idss SORTED IN 5 mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T_a = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS¹
Chip Thickness: 75 ± 13 micron
All Dimensions in Microns
Caution! ESD sensitive device.
MIN TYP MAX UNITS
P_1dB
Output Power at 1dB Compression
V_DS = 6 V, I_DS ≈ 50% Idss
f = 12GHz 18.0 20.0*
f = 18GHz
20.0*
dBm
G_1dB
Gain at 1dB Compression
V_DS = 6 V, I_DS ≈ 50% Idss
f =12GHz 13.0 14.5
f = 18GHz
13.0
dB
PAE Power Added Efficiency at 1dB Compression Vds=6V, Ids=50% Idss f=12Ghz
48 %
NF
Noise Figure, f = 12GHz
V_DS = 2 V, I_DS ≈ 15 mA
Ga
Associated Gain, f = 12GHz
V_DS = 2 V, I_DS ≈ 15 mA
I_DSS
Saturated Drain Current
V_DS =3 V, V_GS = 0 V
G_M
Transconductance
V_DS =3 V, V_GS = 0 V
V_P
Pinch-off Voltage V_DS = 3 V, I_DS = 1.0 mA
BV_GD Drain Breakdown Voltage
I_GD = 0.5mA
BV_GS Source Breakdown Voltage
I_GS = 0.5mA
R_TH
Thermal Resistance (Au-Sn Eutectic Attach)
*P1dB = 21.5dBm can be obtained with 8v/50% Idss bias. Consult factory for wafer selection.
0.75
dB
12.5
dB
30 55 80 mA
35 60
mS
-1.0 -2.5
V
-9 -15
V
-7 -14
185
V
o_C/W
MAXIMUM RATINGS AT 25°C
SYMBOL
CHARACTERISTIC
ABSOLUTE¹
Vds
Drain to Source Voltage
12V
V_GS
Gate to Source Voltage
-8V
Ids
Drain Current
Idss
I_GSF
Forward Gate Current
9mA
P_IN
Input Power
16dBm
T_CH
Channel Temperature
175°C
T_STG
Storage Temperature
-65/175°C
P_T
Total Power Dissipation
740mW
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS²
6V
-3V
Idss
1.5 mA
@ 3dB compression
150°C
-65/150°C
625mW
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 3
Phone: [phone] Fax: [phone] Web: www.excelics.com
Revised November 2007