EMP312 Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – 21.0 - 24.0 GHz Power Amplifier MMIC

UPDATED 04/04/2008
EMP312
21.0 – 24.0 GHz Power Amplifier MMIC
FEATURES
• 21.0 – 24.0 GHz Operating Frequency Range
• 28.5dBm Output Power at 1dB Compression
• 13.0 dB Typical Small Signal Gain
• -40dBc OIMD3 @Each Tone Pout 18.5dBm
APPLICATIONS
• Point-to-point and point-to-multipoint radio
• Military Radar Systems
Dimension: 2140um X 2650um
Thickness: 75um ± 13um
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T_a = 25 °C, 50 ohm, VDD=7V, IDQ=760mA)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX
F
Operating Frequency Range
21.0
24.0
P1dB
Output Power at 1dB Gain Compression
27.0
28.5
Gss
OIMD3
Small Signal Gain
Output 3^rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 18.5dBm
10.0
13.0
-40
-37
Input RL Input Return Loss
-15
-10
Output RL Output Return Loss
-15
-10
Idss
Saturate Drain Current
V_DS =3V, V_GS =0V
858
1072
1288
V_DD
Power Supply Voltage
7
8
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
8
Tb
Operating Base Plate Temperature
-35
+85
UNITS
GHz
dBm
dB
dBc
dB
dB
mA
V
o_C/W
ºC
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION^1,2
SYMBOL
CHARACTERISTIC
VALUE
V_DS
Drain to Source Voltage
8V
V_GS
Gate to Source Voltage
-4 V
I_DD
Drain Current
Idss
I_GSF
Forward Gate Current
15mA
P_IN
Input Power
@ 3dB compression
T_CH
Channel Temperature
150°C
T_STG
Storage Temperature
-65/150°C
P_T
Total Power Dissipation
12.6W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation V_DS*I_DS < (T_CH –T_HS)/R_TH; where T_HS = ambient temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
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Revised April 2008