EMP215 Datasheet, PDF (1/3 Pages) Excelics Semiconductor, Inc. – 12.5 - 16.5 GHz Power Amplifier MMIC

UPDATED 05/08/2008
EMP215
12.5 – 16.5 GHz Power Amplifier MMIC
FEATURES
• 12.5 – 16.5 GHz Operating Frequency Range
• 24.0dBm Output Power at 1dB Compression
• 17.0 dB Typical Small Signal Gain
• -40dBc OIMD3 @Each Tone Pout 14dBm
APPLICATIONS
• Point-to-point and point-to-multipoint radio
• Military Radar Systems
Dimension: 2250um X 1000um
Thickness: 75um ± 13um
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T_a = 25 °C, 50 ohm, VDD=7V, IDQ=190mA)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX
F
Operating Frequency Range
12.5
16.5
P1dB
Output Power at 1dB Gain Compression
22.5
24.0
Gss
OIMD3
Small Signal Gain
Output 3^rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 14dBm
15.0
17.0
-40
-37
Input RL
Input Return Loss
-10
-6
Output RL Output Return Loss
-10
-6
Idss
V_DD
Rth
Saturate Drain Current
V_DS =3V, V_GS =0V
Power Supply Voltage
Thermal Resistance (Au-Sn Eutectic Attach)
211
264
317
7
8
34
Tb
Operating Base Plate Temperature
-35
+85
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION^1,2
SYMBOL
CHARACTERISTIC
VALUE
V_DS
V_GS
I_DD
I_GSF
P_IN
T_CH
T_STG
P_T
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
8V
-4 V
Idss
4mA
@ 3dB compression
150°C
-65/150°C
3.4W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation V_DS*I_DS < (T_CH –T_HS)/R_TH; where T_HS = ambient temperature
UNITS
GHz
dBm
dB
dBc
dB
dB
mA
V
o_C/W
ºC
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
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Revised May 2008