EMP214 Datasheet, PDF (1/3 Pages) Excelics Semiconductor, Inc. – 12.50- 15.50 GHz Power Amplifier MMIC

UPDATED 05/08/2008
EMP214
12.50 – 15.50 GHz Power Amplifier MMIC
FEATURES
• 12.5 – 15.5 GHz Operating Frequency Range
• 29.5dBm Output Power at 1dB Compression
• 16.0 dB Typical Small Signal Gain
• -42dBc OIMD3 @Each Tone Pout 18.5dBm
APPLICATIONS
• Point-to-point and point-to-multipoint radio
• Military Radar Systems
Dimension: 2650um X 2140um
Thickness: 85um ± 15um
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T_a = 25 °C, 50 ohm, VDD=7V, IDQ=750mA)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX UNITS
F
P1dB
Gss
OIMD3
Input RL
Output RL
Idss
V_DD
Rth
Tb
EMP214
Operating Frequency Range
EMP214H
EMP214L
Output Power at 1dB Gain Compression
Small Signal Gain
Output 3^rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 18.5dBm
Ids=60%±10%Idss
Input Return Loss
Output Return Loss
Saturate Drain Current V_DS =3V, V_GS =0V
Power Supply Voltage
Thermal Resistance (Au-Sn Eutectic Attach)
Operating Base Plate Temperature
12.5
15.5
13.5
15.5
GHz
12.5
14.5
28.5
29.5
dBm
13.0
16.0
dB
-42
-39
dBc
-15
-10
dB
-15
-10
dB
920
1150 1380
mA
7
V
11
o_C/W
-35
+85
ºC
MAXIMUM RATINGS AT 25°C^1,2
SYMBOL
CHARACTERISTIC
ABSOLUTE
CONTINUOUS
V_DS
Drain to Source Voltage
12 V
8V
V_GS
Gate to Source Voltage
-8 V
-4 V
I_DD
Drain Current
Idss
1300mA
I_GSF
Forward Gate Current
114mA
19mA
P_IN
Input Power
27dBm
@ 3dB compression
T_CH
Channel Temperature
175°C
150°C
T_STG
Storage Temperature
-65/175°C
-65/150°C
P_T
Total Power Dissipation
12.4W
10.4W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation V_DS*I_DS < (T_CH –T_HS)/R_TH; where T_HS = Base Plate temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
page 1 of 3
Revised May 2008