EMP214-Q5 Datasheet, PDF (1/5 Pages) Excelics Semiconductor, Inc. – 12.50 - 15.50 GHz Surface-Mounted PA

UPDATED 04/24/2008
EMP214-Q5
12.50 – 15.50 GHz Surface-Mounted PA
FEATURES
• 12.5 – 15.5 GHz Operating Frequency Range
• 29.5dBm Output Power at 1dB Compression
• 14.0 dB Typical Small Signal Gain
• -41dBc OIMD3 @Each Tone Pout 18.5dBm
APPLICATIONS
• Point-to-point and point-to-multipoint radio
• Military Radar Systems
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T_a = 25 °C, 50 ohm, VDD=7V, IDQ=750mA)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX
EMP214 – Q5 12.5
15.5
F
Operating Frequency Range
EMP214H – Q5 13.5
15.5
EMP214L – Q5 12.5
14.5
P1dB
Gss
OIMD3
Output Power at 1dB Gain Compression
Small Signal Gain
Output 3^rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 18.5dBm
Ids=60%±10%Idss
28.5
29.5
12.0
14.0
-41
-38
Input RL Input Return Loss
Output RL Output Return Loss
-13
-10
-13
-10
Idss
V_DD
Rth
Saturate Drain Current V_DS =3V, V_GS =0V
Power Supply Voltage
Thermal Resistance¹
920
1150
1380
7
12
Tb
Operating Base Plate Temperature
-35
+75
MAXIMUM RATINGS AT 25°C^2,3
SYMBOL
CHARACTERISTIC
ABSOLUTE
CONTINUOUS
V_DS
Drain to Source Voltage
V_GS
Gate to Source Voltage
I_DD
Drain Current
12 V
-8 V
Idss
8V
-4 V
1300mA
I_GSF
Forward Gate Current
114mA
19mA
P_IN
Input Power
27dBm
@ 3dB compression
T_CH
Channel Temperature
175°C
150°C
T_STG
Storage Temperature
-65/175°C
-65/150°C
P_T
Total Power Dissipation
12.4W
10.4W
1. Measured result when used with Excelics recommended evaluation board.
2. Operating the device beyond any of the above rating may result in permanent damage.
3. Bias conditions must also satisfy the following equation V_DS*I_DS < (T_CH –T_HS)/R_TH; where T_HS = Base Plate temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
UNITS
GHz
dBm
dB
dBc
dB
dB
mA
V
o_C/W
ºC
Page 1 of 5
May 2008