EMP214-P1 Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – 12.50 - 15.50 GHz Power Amplifier MMIC

UPDATED 02/08/2005
EMP214-P1
12.50 – 15.50 GHz Power Amplifier MMIC
FEATURES
• 12.5 – 15.5 GHz Operating Frequency Range
• 29.0dBm Output Power at 1dB Compression
• 15.0 dB Typical Small Signal Gain
• -40dBc OIMD3 @Each Tone Pout 19dBm
Excelics
EMP214
-P1
APPLICATIONS
• Point-to-point and point-to-multipoint radio
• Military Radar Systems
Optional Packaging solutions are available
contact the Excelics sales team for details.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T_a = 25 °C, 50 ohm, VDD=7V, IDQ=800mA)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX
EMP214
12.5
15.5
UNITS
F
Operating Frequency Range
EMP214H
13.5
EMP214L
12.5
15.5
GHz
14.5
P1dB
Output Power at 1dB Gain Compression
27.5
29.0
dBm
Gss
OIMD3
Small Signal Gain
Output 3^rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 19dBm
12.0
15.0
dB
-40
-37
dBc
Input RL Input Return Loss
-15
-10
dB
Output RL Output Return Loss
-15
-10
dB
Idss
Saturate Drain Current
V_DS =3V, V_GS =0V
990
1238
1486
mA
V_DD
Power Supply Voltage
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
7
8
V
7.5
o_C/W
Tb
Operating Base Plate Temperature
-35
+85
ºC
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION^1,2
SYMBOL
CHARACTERISTIC
VALUE
V_DS
Drain to Source Voltage
V_GS
Gate to Source Voltage
I_DD
Drain Current
I_GSF
Forward Gate Current
P_IN
Input Power
T_CH
Channel Temperature
T_STG
Storage Temperature
P_T
Total Power Dissipation
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the fol
8V
-4 V
Idss
15mA
@ 3dB compression
150°C
-65/150°C
15.8W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
page 1 of 2
Revised February 2005