EMP212 Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – 9.50 - 12.0 GHz Power Amplifier MMIC

UPDATED 04/04/2008
EMP212
9.50 – 12.0 GHz Power Amplifier MMIC
FEATURES
• 9.5 – 12.0 GHz Operating Frequency
• 30.5dBm Output Power at 1dB Compression
• 18 dB Typical Power Gain
• 43dBc OIMD3 @ EACH TONE Pout 19dBm
APPLICATIONS
• Point-to-point and point-to-multipoint radio
• Military Radar Systems
Dimension: 2500um X 1600um
Thickness: 85um ± 15um
ELECTRICAL CHARACTERISTICS (T_a = 25 °C, Vdd^*=7V, Idsq=800mA)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN TYP MAX
UNITS
F
Operating Frequency Range
9.5
12.0
GHz
P_1dB
Gss
OIMD3
Input RL
Output Power at 1dB Gain Compression
Small Signal Gain Vdd=5V
Output 3^rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 19dBm
Ids= 60%±10%Idss
Input Return Loss
29.5 30.5
15
18
dBm
dB
-43
-40
dBc
-10
-7
dB
Output RL Output Return Loss
-8
-5
dB
Idss
Saturated Drain Current
Vds=3V, Vgs=0V
950 1250 1500
mA
Vdd
Drain Voltage
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
7
8
V
8.5
o_C/W
Tb
Operating Base Plate Temperature
*Unless otherwise specified
-35
+85
ºC
MAXIMUM RATINGS AT 25°C^1,2
SYMBOL
CHARACTERISTIC
ABSOLUTE
CONTINUOUS
V_DS
Drain to Source Voltage
12V
8V
V_GS
Gate to Source Voltage
-8V
-4 V
I_DD
Drain Current
Idss
1300mA
I_GSF
Forward Gate Current
114mA
19mA
P_IN
Input Power
27dBm
@ 3dB compression
T_CH
Channel Temperature
175°C
150°C
T_STG
Storage Temperature
-65/175°C
-65/150°C
P_T
Total Power Dissipation
12.4W
10.4W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation V_DS*I_DS<(T_CH –T_HS)/R_TH; where T_HS =Operating Base Plate temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
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Revised April 2008