EMP212-P1 Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – 9.0 - 12.0 GHz Power Amplifier MMIC

UPDATED: 05/15/2008
EMP212-P1
9.0 – 12.0 GHz Power Amplifier MMIC
FEATURES
• 9.0 – 12.0 GHz Operating Frequency Range
• 30.0dBm Output Power at 1dB Compression
• 16.0 dB Typical Small Signal Gain
• -40dBc OIMD3 @Each Tone Pout 19.5dBm
Excelics
EMP212
-P1
APPLICATIONS
• Point-to-point and point-to-multipoint radio
• Military Radar Systems
Optional Packaging solutions are available
Contact the Excelics sales team for details.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T_a = 25 °C, 50 ohm, VDD=7V, IDQ=800mA)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX
UNITS
F
P1dB
Gss
OIMD3
Input RL
Output RL
Idss
V_DD
Rth
Tb
Operating Frequency Range
Output Power at 1dB Gain Compression
Small Signal Gain
Output 3^rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 19.5dBm
Input Return Loss
Output Return Loss
Saturate Drain Current
V_DS =3V, V_GS =0V
Power Supply Voltage
Thermal Resistance (Au-Sn Eutectic Attach)
Operating Base Plate Temperature
9.0
12.0
GHz
28.0
30.0
dBm
13.0
16.0
dB
-40
-37
dBc
-10
-8
dB
-10
-6
dB
990
1238
1486
mA
7
8
V
7.5
o_C/W
-35
+85
ºC
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION^1,2
SYMBOL
CHARACTERISTIC
VALUE
V_DS
Drain to Source Voltage
8V
V_GS
Gate to Source Voltage
-4 V
I_DD
Drain Current
Idss
I_GSF
Forward Gate Current
16mA
P_IN
Input Power
@ 3dB compression
T_CH
Channel Temperature
150°C
T_STG
Storage Temperature
-65/150°C
P_T
Total Power Dissipation
15.8W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation V_DS*I_DS < (T_CH –T_HS)/R_TH; where T_HS = ambient temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
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Revised May 2008