EMP211-P1 Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – 9.0 - 12.0 GHz Power Amplifier MMIC

UPDATED: 05/15/2008
EMP211-P1
9.0 – 12.0 GHz Power Amplifier MMIC
FEATURES
• 9.0 – 12.0 GHz Operating Frequency Range
• 26.5dBm Output Power at 1dB Compression
• 15.0 dB Typical Small Signal Gain
• -40dBc OIMD3 @Each Tone Pout 16.5dBm
Excelics
EMP211
-P1
APPLICATIONS
• Point-to-point and point-to-multipoint radio
• Military Radar Systems
Optional Packaging solutions are available
Contact the Excelics sales team for details.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T_a = 25 °C, 50 ohm, VDD=7V, IDQ=380mA)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX
F
Operating Frequency Range
9.0
12.0
P1dB
Output Power at 1dB Gain Compression
25.0
26.5
Gss
OIMD3
Small Signal Gain
Output 3^rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 16.5dBm
13.0
15.0
-40
-37
Input RL
Input Return Loss
-10
-7
Output RL Output Return Loss
-10
-7
Idss
Saturate Drain Current
V_DS =3V, V_GS =0V
460
619
700
V_DD
Power Supply Voltage
7
8
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
15
Tb
Operating Base Plate Temperature
-35
+85
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION^1,2
SYMBOL
CHARACTERISTIC
VALUE
V_DS
Drain to Source Voltage
8V
V_GS
Gate to Source Voltage
-4 V
I_DD
Drain Current
Idss
I_GSF
Forward Gate Current
7.5mA
P_IN
Input Power
@ 3dB compression
T_CH
Channel Temperature
150°C
T_STG
Storage Temperature
-65/150°C
P_T
Total Power Dissipation
7.9W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation V_DS*I_DS < (T_CH –T_HS)/R_TH; where T_HS = ambient temperature
UNITS
GHz
dBm
dB
dBc
dB
dB
mA
V
o_C/W
ºC
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
page 1 of 2
Revised May 2008