EMP210 Datasheet, PDF (1/3 Pages) Excelics Semiconductor, Inc. – 9.5 - 12 GHz Power Amplifier MMIC

UPDATED 05/08/2008
EMP210
9.5 – 12 GHz Power Amplifier MMIC
FEATURES
• 9.5 – 12.0 GHz Operating Frequency Range
• 24.0dBm Output Power at 1dB Compression
• 17.0 dB Typical Small Signal Gain
• -41dBc OIMD3 @Each Tone Pout 12.5dBm
APPLICATIONS
• Point-to-point and point-to-multipoint radio
• Military Radar Systems
Dimension: 2250um X 1000um
Thickness: 75um ± 13um
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T_a = 25 °C, 50 ohm, VDD=7V, IDQ=180mA)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX
UNITS
F
P1dB
Gss
OIMD3
Input RL
Output RL
Idss
V_DD
Rth
Tb
Operating Frequency Range
Output Power at 1dB Gain Compression
Small Signal Gain
Output 3^rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 12.5dBm
Vdd=7V, Idsq=60%±10%Idss
Input Return Loss
Output Return Loss
Saturated Drain Current
Drain Voltage
V_DS =3V, V_GS =0V
Thermal Resistance (Au-Sn Eutectic Attach)
Operating Base Plate Temperature
9.5
12.0
GHz
22.5
24.0
dBm
15.0
17.0
dB
-41
-38
dBc
-10
-8
dB
-8
-5
dB
211
264
317
mA
7
8
V
34
o_C/W
-35
+85
ºC
MAXIMUM RATINGS AT 25°C^1,2
SYMBOL
CHARACTERISTIC
ABSOLUTE
CONTINUOUS
V_DS
Drain to Source Voltage
12V
8V
V_GS
Gate to Source Voltage
-8V
-4 V
I_DD
Drain Current
Idss
264
I_GSF
Forward Gate Current
24mA
4mA
P_IN
Input Power
20dBm
@ 3dB compression
T_CH
Channel Temperature
175°C
150°C
T_STG
Storage Temperature
-65/175°C
-65/150°C
P_T
Total Power Dissipation
4.1W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation V_DS*I_DS < (T_CH –T_HS)/R_TH; where T_HS = ambient temperature
3.4W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
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Revised May 2008