EMP209 Datasheet, PDF (1/3 Pages) Excelics Semiconductor, Inc. – 17.0 - 20.0 GHz Power Amplifier MMIC

UPDATED 05/08/2008
EMP209
17.0 – 20.0 GHz Power Amplifier MMIC
FEATURES
• 17.0 – 20.0 GHz Operating Frequency Range
• 29.0dBm Output Power at 1dB Compression
• 15.0 dB Typical Small Signal Gain
• -40dBc OIMD3 @Each Tone Pout 19.5dBm
APPLICATIONS
• Point-to-point and point-to-multipoint radio
• Military Radar Systems
Dimension: 2100um x 2650um
Thickness: 75um ± 13um
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T_a = 25 °C, 50 ohm, VDD=7V, IDQ=760mA)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX UNITS
F
Operating Frequency Range
17.0
20.0
GHz
P1dB
Output Power at 1dB Gain Compression
28.0
29.0
dBm
Gss
OIMD3
Small Signal Gain
Output 3^rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 19.5dBm
12.0
15.0
dB
-40
-37
dBc
Input RL Input Return Loss
-15
-10
dB
Output RL Output Return Loss
-15
-10
dB
Idss
Saturate Drain Current
V_DS =3V, V_GS =0V
858
1072 1286
mA
V_DD
Power Supply Voltage
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
7
8
V
9
o_C/W
Tb
Operating Base Plate Temperature
-35
+85
ºC
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION^1,2
SYMBOL
CHARACTERISTIC
VALUE
V_DS
V_GS
I_DD
I_GSF
P_IN
T_CH
T_STG
P_T
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
8V
-4 V
Idss
15mA
@ 3dB compression
150°C
-65/150°C
12.6W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation V_DS*I_DS < (T_CH –T_HS)/R_TH; where T_HS = ambient temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
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Revised May 2008