EMP112-P1 Datasheet, PDF (1/1 Pages) Excelics Semiconductor, Inc. – 5.0 - 7.2 GHz Power Amplifier MMIC

ISSUED DATE: 07-01-04
EMP112-P1
5.0 – 7.2 GHz Power Amplifier MMIC
FEATURES
• 5.0 – 7.2 GHz Operating Frequency Range
• 29.5dBm Output Power at 1dB Compression
• 21.0 dB Typical Small Signal Gain
• -40dBc OIMD3 @Each Tone Pout 19dBm
APPLICATIONS
• Point-to-point and point-to-multipoint radio
• Military Radar Systems
Optional Packaging solutions are available
contact the Excelics sales team for details.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T_a = 25 °C, 50 ohm, VDD=7V, IDQ= 800 mA)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN TYP MAX UNITS
F
Operating Frequency Range
5.0
7.2 GHz
P1dB Output Power at 1dB Gain Compression
28.0 29.5
dBm
Gss
Small Signal Gain
18.0 21.0
dB
Output 3^rd Order Intermodulation Distortion
OIMD3 _{@∆f=10MHz, Each Tone Pout 19dBm}
-40
dBc
Input RL Input Return Loss
-14
dB
Output RL Output Return Loss
-6
dB
Idss
V_DD
Rth
Saturate Drain Current
V_DS =3V, V_GS =0V 992 1240 1488 mA
Power Supply Voltage
7
8
V
Thermal Resistance (Au-Sn Eutectic Attach)
7.5
o_C/W
Tb
Operating Base Plate Temperature
- 35
+ 85 ºC
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION^1,2
SYMBOL
CHARACTERISTIC
VALUE
V_DS
Drain to Source Voltage
8V
V_GS
Gate to Source Voltage
-4V
I_DD
Drain Current
Idss
I_GSF
Forward Gate Current
18 mA
P_IN
Input Power
@ 3dB compression
T_CH
Channel Temperature
150°C
T_STG
Storage Temperature
-65/150°C
P_T
Total Power Dissipation
15.2W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation V_DS*I_DS < (T_CH –T_HS)/R_TH; where T_HS = ambient temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
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Revised July 2004