EMP111 Datasheet, PDF (1/3 Pages) Excelics Semiconductor, Inc. – 7.0 - 9.0 GHz Power Amplifier MMIC

UPDATED 10/05/2004
FEATURES
• 7.0 – 9.0 GHz Operating Frequency Range
• 27.0dBm Output Power at 1dB
Compression
• 18.0 dB Typical Small Signal Gain
• -40dBc OIMD3 @Each Tone Pout 17 dBm
APPLICATIONS
• Point-to-point and point-to-multipoint radio
• Military Radar Systems
EMP111
7.0 – 9.0 GHz Power Amplifier MMIC
Dimension: 1130um X 2250um
Thickness: 85um + 13um
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS
(Tb = 25 °C, 50 ohm, Vds = 7 V, Idsq = 400 mA, Unless Otherwise Specified)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN TYP MAX UNITS
F
Operating Frequency Range
7.0
9.0 GHz
P1dB
Output Power at 1dB Gain Compression
26.0 27.0
dBm
Gss
OIMD3
Input RL
Small Signal Gain
Output 3^rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 17dBm,
7V, 60%+10%Idss
Input Return Loss
15.0 18.0
dB
-41
-38
dBc
-12
-8
dB
Output RL Output Return Loss
-6
dB
Idss
Saturated Drain Current Vds =3V, V_GS =0V 475
620
750
mA
Vds
Drain to Source Voltage
7
8
V
NF
Noise Figure @8GHz
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
8
dB
22
o_C/W
Tb
Operating Base Plate Temperature
MAXIMUM RATINGS AT 25°C^1,2
- 35
+ 85
ºC
SYMBOL
CHARACTERISTIC
ABSOLUTE
Vds Drain to Source Voltage
12V
V_GS Gate to Source Voltage
-8V
Ids
Drain Current
Idss
I_GSF
Forward Gate Current
57mA
P_IN
Input Power
24dBm
T_CH
Channel Temperature
175°C
T_STG Storage Temperature
-65/175°C
P_T
Total Power Dissipation
6.2W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation Vds*Ids < (T_CH –Tb)/R_TH
CONTINUOUS
8V
-4V
650mA
9.5 mA
@ 3dB compression
150°C
-65/150°C
5.2W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
page 1 of 3
Revised October 2004