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EMP109 Datasheet, PDF (1/3 Pages) Excelics Semiconductor, Inc. – 5.0 - 6.5 GHz Power Amplifier MMIC | |||
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UPDATED 12/15/2004
FEATURES
⢠5.0 â 6.5 GHz Operating Frequency Range
⢠27.0dBm Output Power at 1dB Compression
⢠20.0 dB Typical Small Signal Gain
⢠-41dBc OIMD3 @Each Tone Pout 17 dBm
APPLICATIONS
⢠Point-to-point and point-to-multipoint radio
⢠Military Radar Systems
EMP109
5.0 â 6.5 GHz Power Amplifier MMIC
Dimension: 1130um X 2250um
Thickness: 85um + 15um
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS
(Tb = 25 °C, 50 ohm, Vds = 7 V, Idsq = 400 mA, Unless Otherwise Specified)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN TYP MAX UNITS
F
Operating Frequency Range
5.0
6.5 GHz
P1dB
Output Power at 1dB Gain Compression
26.0 27.0
dBm
Gss
Small Signal Gain
17.0 20.0
dB
OIMD3
Output 3rd Order Intermodulation Distortion
@âf=10MHz, Each Tone Pout 17dBm, 7V, 60%+10%Idss
-41 -38 dBc
Input RL Input Return Loss
-12 -8
dB
Output RL Output Return Loss
-6
dB
Idss
Vds
Saturated Drain Current
Drain to Source Voltage
Vds =3V, VGS =0V
490 570 660 mA
7
8
V
NF
Noise Figure @6GHz
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
7
dB
22
oC/W
Tb
Operating Base Plate Temperature
- 35
+ 85
ºC
MAXIMUM RATINGS AT 25°C1,2
SYMBOL
CHARACTERISTIC
ABSOLUTE
CONTINUOUS
Vds Drain to Source Voltage
12V
8V
VGS Gate to Source Voltage
Ids
Drain Current
-8V
-4V
Idss
650mA
IGSF
Forward Gate Current
57mA
PIN
Input Power
24dBm
TCH
Channel Temperature
175°C
TSTG Storage Temperature
-65/175°C
PT
Total Power Dissipation
6.2W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation Vds*Ids < (TCH âTb)/RTH
9.5 mA
@ 3dB compression
150°C
-65/150°C
5.2W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 3
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
Revised December 2004
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