EMP106 Datasheet, PDF (1/3 Pages) Excelics Semiconductor, Inc. – 5.0 - 6.4 GHz Power Amplifier MMIC

UPDATED 12/15/2004
FEATURES
• 5.0 – 6.4 GHz Operating Frequency Range
• 23.5dBm Output Power at 1dB Compression
• 20.0 dB Typical Small Signal Gain
• -41dBc OIMD3 @Each Tone Pout 13 dBm
EMP106
5.0 – 6.4 GHz Power Amplifier MMIC
APPLICATIONS
• Point-to-point and point-to-multipoint radio
• Military Radar Systems
Dimension: 1130um X 2250um
Thickness: 85um + 15um
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS
(Tb = 25 °C, 50 ohm, Vds = 7 V, Idsq = 200 mA, Unless Otherwise Specified)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN TYP MAX
F
Operating Frequency Range
5.0
6.4
P1dB Output Power at 1dB Gain Compression
22.5 23.5
Gss
Small Signal Gain
17.0 20.0
OIMD3
Output 3^rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 13dBm, 7V, 60%+10%Idss
-41 -38
Input RL Input Return Loss
-12
-8
Output RL Output Return Loss
-6
Idss
Vds
Saturated Drain Current
Drain to Source Voltage
Vds =3V, V_GS =0V
245 285 330
7
8
NF
Noise Figure @6GHz
8
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
44
Tb
Operating Base Plate Temperature
MAXIMUM RATINGS AT 25°C^1,2
- 35
+ 85
SYMBOL
CHARACTERISTIC
ABSOLUTE
CONTINUOUS
Vds Drain to Source Voltage
12V
8V
V_GS Gate to Source Voltage
Ids
Drain Current
-8V
-4V
Idss
325mA
I_GSF
Forward Gate Current
28mA
P_IN
Input Power
21dBm
T_CH
Channel Temperature
175°C
T_STG Storage Temperature
-65/175°C
P_T
Total Power Dissipation
3.1W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation Vds*Ids < (T_CH –Tb)/R_TH
4.5 mA
@ 3dB compression
150°C
-65/150°C
2.6W
UNITS
GHz
dBm
dB
dBc
dB
dB
mA
V
dB
o_C/W
ºC
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 3
Phone: [phone] Fax: [phone] Web: www.excelics.com
Revised December 2004