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EMP105-P2 Datasheet, PDF (1/1 Pages) Excelics Semiconductor, Inc. – 4.0 - 5.5 GHz Power Amplifier MMIC | |||
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ISSUED DATE: 07-12-04
EMP105-P2
4.0 â 5.5 GHz Power Amplifier MMIC
FEATURES
⢠4.0 â 5.5 GHz Operating Frequency Range
⢠32.5dBm Output Power at 1dB Compression
⢠18.0 dB Typical Small Signal Gain
⢠-40dBc OIMD3 @Each Tone Pout 22dBm
APPLICATIONS
⢠Point-to-point and point-to-multipoint radio
⢠Military Radar Systems
Optional Packaging solutions are available
contact the Excelics sales team for details.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, VDD=10V, IDQ=950mA)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN TYP MAX UNITS
F
Operating Frequency Range
4.0
5.5 GHz
P1dB Output Power at 1dB Gain Compression
Gss
OIMD3
Small Signal Gain
Output 3rd Order Intermodulation Distortion
@âf=10MHz, Each Tone Pout 22dBm
Input RL Input Return Loss
Output RL Output Return Loss
31.5 32.5
16.0 18.0
dBm
dB
-40
dBc
-11
-8
dB
-6
dB
Idss
Saturate Drain Current
VDS =3V, VGS =0V
1680
VDD
Power Supply Voltage
10
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
7
Tb
Operating Base Plate Temperature
-35
+80
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
mA
V
oC/W
ºC
SYMBOL
CHARACTERISTIC
VALUE
VDS
Drain to Source Voltage
10 V
VGS
Gate to Source Voltage
-4 V
IDD
Drain Current
Idss
IGSF
Forward Gate Current
35mA
PIN
Input Power
@ 3dB compression
TCH
Channel Temperature
150°C
TSTG
Storage Temperature
-65/150°C
PT
Total Power Dissipation
17W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation VDS*IDS < (TCH âTHS)/RTH; where THS = ambient temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 1
Revised July 2004
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