EMP104 Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – 5.0 - 6.5 GHz Power Amplifier MMIC

UPDATED 03/19/2008
EMP104
5.0 – 6.5 GHz Power Amplifier MMIC
FEATURES
• 5.0 – 6.5 GHz Operating Frequency Range
• 33.0dBm Output Power at 1dB Compression
• 18.0 dB Typical Small Signal Gain
• -44dBc OIMD3 @Each Tone Pout 22dBm
APPLICATIONS
• Point-to-point and point-to-multipoint radio
• Military Radar Systems
Dimension: 2200um X 3230um
Thickness: 65um + 15um
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T_a = 25 °C, 50 ohm, VDD=10V, IDQ=1000mA)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN TYP MAX
F
Operating Frequency Range
5.0
6.5
P1dB
Output Power at 1dB Gain Compression
32.0 33.0
Gss
OIMD3
Small Signal Gain
Output 3^rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 22dBm
16.0 18.0
-44
-40
Input RL Input Return Loss
-8
-6
Output RL Output Return Loss
-6
Idss
V_DD
Saturate Drain Current
Power Supply Voltage
V_DS =3V, V_GS =0V
1680
10
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
7
Tb
Operating Base Plate Temperature
- 35
+ 80
UNITS
GHz
dBm
dB
dBc
dB
dB
mA
V
o_C/W
ºC
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION^1,2
SYMBOL
CHARACTERISTIC
VALUE
V_DS
Drain to Source Voltage
10V
V_GS
Gate to Source Voltage
- 4V
I_DD
Drain Current
Idss
I_GSF
Forward Gate Current
35 mA
P_IN
Input Power
@ 3dB compression
T_CH
Channel Temperature
150°C
T_STG
Storage Temperature
-65/150°C
P_T
Total Power Dissipation
17W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation V_DS*I_DS < (T_CH –T_HS)/R_TH; where T_HS = ambient temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
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Revised April 2008