EMP103-P2 Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – 6.4 - 8.0 GHz Power Amplifier MMIC

UPDATED: 05/08/2008
EMP103-P2
6.4 – 8.0 GHz Power Amplifier MMIC
FEATURES
• 6.4 – 8.0 GHz Operating Frequency Range
• 32.5dBm Output Power at 1dB Compression
• 14.0 dB Typical Small Signal Gain
• -40dBc OIMD3 @Each Tone Pout 22dBm
Excelics
EMP103
-P2
APPLICATIONS
• Point-to-point and point-to-multipoint radio
• Military Radar Systems
Optional Packaging solutions are available
Contact the Excelics sales team for details.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T_a = 25 °C, 50 ohm, VDD=10V, IDQ=1000mA)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX UNITS
F
Operating Frequency Range
6.4
8.0
GHz
P1dB
Output Power at 1dB Gain Compression
31.5
32.5
dBm
Gss
Small Signal Gain
13.0
14.0
dB
Output 3^rd Order Intermodulation Distortion
OIMD3
@∆f=10MHz, Each Tone Pout 22dBm
-40
dBc
Input RL Input Return Loss
-15
-10
dB
Output RL Output Return Loss
-6
dB
Idss
Saturate Drain Current
V_DS =3V, V_GS =0V
1680
mA
V_DD
Power Supply Voltage
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
10
V
7
o_C/W
Tb
Operating Base Plate Temperature
-35
+80
ºC
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION^1,2
SYMBOL
CHARACTERISTIC
VALUE
V_DS
Drain to Source Voltage
10 V
V_GS
Gate to Source Voltage
-4 V
I_DD
Drain Current
Idss
I_GSF
Forward Gate Current
35mA
P_IN
Input Power
@ 3dB compression
T_CH
Channel Temperature
150°C
T_STG
Storage Temperature
-65/150°C
P_T
Total Power Dissipation
17W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation V_DS*I_DS < (T_CH –T_HS)/R_TH; where T_HS = ambient temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
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Revised May 2008