EMA406C Datasheet, PDF (1/4 Pages) Excelics Semiconductor, Inc. – 26 - 32 GHz Low Noise MMIC

Excelics
TENTATIVE DATA SHEET
26 - 32 GHz Low Noise MMIC
EMA406C
FEATURES
• 26 -32 GHz BANDWIDTH
• +20.0 dBm TYPICAL OUTPUT POWER
• 21 dB ± 1.5 dB TYPICAL POWER GAIN
• FOUR SECTION, DISTRIBUTED AMPLIFIER
• DUAL BIAS SUPPLY
• 0.3 MICRON RECESSED “MUSHROOM” GATE
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
ELECTRICAL CHARACTERISTICS¹ (T_a = 25 ^OC)
SYMBOL
PARAMETERS/TEST CONDITIONS
F
Operating Frequency Range
P_1dB
Ouput Power at 1dB Gain Compression
Gss
Small Signal Gain
∆Gss Small Signal Gain Flatness
NF
Noise Figure
VSWR in Input VSWR
VSWR out Output VSWR
Idd
Power Supply Current
Vdd
Power Supply Voltage
Chip Size 1060 x 2500 microns
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
MIN TYP MAX UNIT
26
32 GHz
20
dBm
21
dB
± 1.5
dB
6
dB
2.0:1
3.0:1
140
mA
5
8
V
MAXIMUM RATINGS AT 25^OC
SYMBOLS PARAMETERS
ABSOLUTE¹
CONTINUOUS²
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-3V
Ids
Drain Current
Idss
215mA
Igf
Forward Gate Current
50 mA
8.5mA
Pin
Input Power
15dBm
Tch
Channel Temperature
175^oC
Tstg
Storage Temperature
-65/175^oC
@3dB Compression
150^oC
-65/150^oC
Pt
Total Power Dissipation
1W
0.85 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com