EMA303D-2 Datasheet, PDF (1/4 Pages) Excelics Semiconductor, Inc. – 19.5 - 24 GHz Medium Power MMIC

Excelics
DATA SHEET
19.5 - 24 GHz Medium Power MMIC
FEATURES
• 19.5 -24 GHz BANDWIDTH
• +22 dBm OUTPUT POWER @1dB Gain Compression
• 22 dB TYPICAL SMALL SIGNAL GAIN
• DUAL BIAS SUPPLY
• 0.3 MICRON RECESSED “MUSHROOM” GATE
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
ELECTRICAL CHARACTERISTICS¹ (T_a = 25 ^OC)
SYMBOL
PARAMETERS/TEST CONDITIONS
F
Operating Frequency Range
P_1dB
Ouput Power at 1dB Gain Compression
@ Vdd=8V ; Id= 0.5 Idss
@ Vdd=6V ; Id= 0.5 Idss
Gss
Small Signal Gain @ Vdd=6V ; Id= 0.5 Idss
∆Gss
NF
Small Signal Gain Flatness
Noise Figure @ f=18GHz, Vdd=3.5V, Id=140mA
Input RL Input Return Loss
Output RL Output Return Loss
Idd
Power Supply Current
Vdd
Power Supply Voltage
EMA303D-2
Release Date: March 7, 2003
Chip Size 1060 x 2500 microns
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
MIN TYP MAX UNIT
19.5
24 GHz
21.5 23
dBm
19.5 21
20 22
dB
± 1.5
dB
4
dB
9
dB
8
dB
140
mA
6
8
V
MAXIMUM RATINGS AT 25^OC
SYMBOLS PARAMETERS
ABSOLUTE¹
CONTINUOUS²
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-3V
Ids
Drain Current
Idss
215mA
Igf
Forward Gate Current
50 mA
8.5mA
Pin
Input Power
15dBm
Tch
Channel Temperature
175^oC
Tstg
Storage Temperature
-65/175^oC
@3dB Compression
150^oC
-65/150^oC
Pt
Total Power Dissipation
1W
0.85 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com