EMA205B Datasheet, PDF (1/4 Pages) Excelics Semiconductor, Inc. – 9-16 GHz Medium Power MMIC

EMA205B
9-16 GHz Medium Power MMIC
FEATURES
• 9-16 GHz BANDWIDTH
• +18.0 dBm TYPICAL OUTPUT POWER
• 14 dB ± 1.5 dB TYPICAL POWER GAIN
• TWO SECTION, DISTRIBUTED AMPLIFIER
• DUAL BIAS SUPPLY
• 0.3 MICRON RECESSED “MUSHROOM” GATE
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
APPLICATIONS
• Analog and Digital Wireless Systems
• Military Applications
• C-Band Terrestrial Radio
ELECTRICAL CHARACTERISTICS (T_a = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS¹
F
Operating Frequency Range
P_1dB
Ouput Power at 1dB Gain Compression @ Vdd=6V 50%
Idss
Gss
Small Signal Gain
∆Gss
Small Signal Gain Flatness
NF
Noise Figure
Input RL Input Return Loss
Output RL Output Return Loss
Idd
Power Supply Current
Vdd
Power Supply Voltage
Notes:
1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
Caution! ESD sensitive device.
Chip Size 1060 x 2000 microns
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
MIN TYP MAX UNITS
9
16
GHz
16.5 18.0
dBm
12
14
dB
± 1.5 ± 2.0
dB
4
dB
9
dB
7
dB
160
mA
5
8
V
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
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Revised May 2004