EMA112-CP083 Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – 0.5 - 3.0 GHz High Linearity Power MMIC

ISSUED 11/27/2006
Features
• 0.5 – 3.0 Ghz Bandwidth
• 28.0dBm Typical Output Power at 1dB
Compression
• 15.0 dB Typical Small Signal Gain
• Single Bias Supply
EMA112-CP083
0.5 – 3.0 GHz High Linearity Power MMIC
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T_b = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS¹
F
Operating Frequency Range
MIN
TYP
MAX UNITS
0.5
3
GHz
P_1dB
G_SS
OIMD3
NF
RL_IN
RL_OUT
I_DD
R_TH
Power at 1dB Compression V_DD = 8.0V, F=2.4G
Small Signal Gain
V_DD = 8.0V, F=2.4G
Output 3^rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 18dBm
V_DD = 8.0V, F=2.4G
Noise Figure
V_DD = 8.0V, F=2.4G
Input Return Loss
V_DD = 8.0V, F=2.4G
Output Return Loss
V_DD = 8.0V, F=2.4G
Power Supply Current
Thermal Resistance¹
27.0
28.0
13.0
15.0
dBm
dB
-46
-43
dBc
2.7
3.2
dB
8
10
dB
8
10
dB
170
210
250
mA
35
o_C/W
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION^1,2
SYMBOL
CHARACTERISTIC
VALUE
V_DD
Power Supply Voltage
8V
V_GG
Gate Voltage
-3 V
I_DD
Drain Current
IDSS
I_GSF
Forward Gate Current
10 mA
P_IN
Input Power
@ 3dB compression
P_T
Total Power Dissipation
3.5 W
T_CH
Channel Temperature
150°C
T_STG
Storage Temperature
-65/+150°C
Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2. Bias conditions must also satisfy the following equation V_DS * I_DS < (T_CH–T_b )/R_TH; where T_b = base plate temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: [phone] Fax: [phone] Web: www.excelics.com
Revised November 2006