EMA110-130F Datasheet, PDF (1/1 Pages) Excelics Semiconductor, Inc. – 0.5 - 3.0 GHz High Linearity Power MMIC

UPDATED 08/10/2005
EMA110-130F
0.5 – 3.0 GHz High Linearity Power MMIC
FEATURES
• 0.5 – 3.0 GHz BANDWIDTH
• 27.0dBm TYPICAL OUTPUT POWER
• -45dBc OIMD3 @ 17dBm EACH TONE Pout
• 11.0 dB TYPICAL POWER GAIN
• SINGLE BIAS SUPPLY
• 100% DC TESTED
• Hermetic 130 mil Ceremic Flange Package
Excelics
EMA110
-130F
ELECTRICAL CHARACTERISTICS (T_a = 25°C)
SYMBOL
PARAMETER/TEST CONDITIONS¹
DIMENSION: INCH
Caution! ESD sensitive device.
MIN
TYP
MAX UNITS
F
Operating Frequency Range
0.5
3.0
P_1dB Power at 1dB Compression
V_DD = 8.0V, F = 2.4G
25.5
27.0
Gss
IMD3
Small Signal Gain
V_DD = 8.0V, F = 2.4G
Output 3^rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 17dBm
V_DD = 8.0V, F = 2.4G
9.5
11.0
-45
-42
RL_IN Input Return Loss
V_DD = 8.0V
-12
-6
RL_OUT Output Return Loss
V_DD = 8.0V
-12
-6
I_DD
Drain Current
190
240
290
RTH Thermal Resistance¹
36
Note: 1. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION^1,2
SYMBOL
CHARACTERISTIC
VALUE
V_DD
Power Supply Voltage
8V
V_GG
Gate Voltage
-3 V
I_DD
Drain Current
IDSS
I_GSF
Forward Gate Current
10 mA
P_IN
Input Power
@ 3dB compression
P_T
Total Power Dissipation
2.8 W
T_CH
Channel Temperature
150°C
T_STG
Storage Temperature
-65/+150°C
Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2. Bias conditions must also satisfy the following equation P_T < (T_CH –T_HS)/R_TH; where T_HS = temperature of heatsink,
and P_T = (V_DD * I_DD) – (P_OUT – P_IN).
GHz
dBm
dB
dBc
dB
dB
mA
o_C/W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
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Revised August 2005