EMA109 Datasheet, PDF (1/3 Pages) Excelics Semiconductor, Inc. – 0.5 - 3.0 GHz High Linearity Power MMIC

UPDATED 11/11/2004
EMA109
0.5 – 3.0 GHz High Linearity Power MMIC
FEATURES
• 0.5 – 3.0 GHz BANDWIDTH
• 24.0dBm TYPICAL OUTPUT POWER
• -45dBc OIMD3 @ 14dBm EACH TONE Pout
• 11.0 dB TYPICAL POWER GAIN
• SINGLE BIAS SUPPLY
• 100% DC TESTED
Dimension: 760um X 700um
ELECTRICAL CHARACTERISTICS (T_a = 25°C)
SYMBOL
PARAMETER/TEST CONDITIONS¹
Caution! ESD sensitive device.
MIN TYP MAX UNITS
F
Operating Frequency Range
0.5
3.0 GHz
P_1dB
Power at 1dB Compression
V_DD = 8.0V, F = 2.4G
23.0 24.0
dBm
Gss
IMD3
Small Signal Gain
V_DD = 8.0V, F = 2.4G
Output 3^rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 14dBm
V_DD = 8.0V, F = 2.4G
10.0 11.0
dB
-45
-42
dBc
RL_IN Input Return Loss
V_DD = 8.0V
-12
-8
dB
RL_OUT Output Return Loss
V_DD = 8.0V
-12
-8
dB
I_DD
Drain Current
R_TH
Thermal Resistance¹
Note: 1. Overall Rth depends on die attach.
90
120
150
mA
70
o_C/W
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION^1,2
SYMBOL
CHARACTERISTIC
VALUE
V_DD
Power Supply Voltage
8V
V_GG
Gate Voltage
-3 V
I_DD
Drain Current
IDSS
I_GSF
Forward Gate Current
10 mA
P_IN
Input Power
@ 3dB compression
P_T
Total Power Dissipation
1.4 W
T_CH
Channel Temperature
150°C
T_STG
Storage Temperature
-65/+150°C
Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2. Bias conditions must also satisfy the following equation P_T < (T_CH –T_HS)/R_TH; where T_HS = temperature of heatsink,
and P_T = (V_DD * I_DD) – (P_OUT – P_IN).
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 3
Phone: [phone] Fax: [phone] Web: www.excelics.com
Revised November 2004