EID1415A1-5 Datasheet, PDF (1/4 Pages) Excelics Semiconductor, Inc. – 14.40-15.35 GHz 5-Watt Internally-Matched Power FET

UPDATED 07/12/2007
EID1415A1-5
14.40-15.35 GHz 5-Watt Internally-Matched Power FET
FEATURES
• 14.40-15.35 GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +37.5 dBm Output Power at 1dB Compression
• 7.5 dB Power Gain at 1dB Compression
• 35% Power Added Efficiency
• Hermetic Metal Flange Package
• 100% Tested for DC, RF, and R_TH
DESCRIPTION
The EID1415A1-5 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics’ unique
PHEMT transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T_a = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS¹
P_1dB
G_1dB
∆G
PAE
Output Power at 1dB Compression f = 14.40-15.35GHz
V_DS = 10 V, I_DSQ ≈ 1200mA
Gain at 1dB Compression
f = 14.40-15.35GHz
V_DS = 10 V, I_DSQ ≈ 1200mA
Gain Flatness
f = 14.40-15.35GHz
V_DS = 10 V, I_DSQ ≈ 1200mA
Power Added Efficiency at 1dB Compression
V_DS = 10 V, I_DSQ ≈ 1200mA
f = 14.40-15.35GHz
Id_1dB
Drain Current at 1dB Compression f = 14.40-15.35GHz
I_DSS
Saturated Drain Current
V_DS = 3 V, V_GS = 0 V
V_P
Pinch-off Voltage
R_TH
Thermal Resistance³
Notes:
1. Tested with 100 Ohm gate resistor.
2. Overall Rth depends on case mounting.
V_DS = 3 V, I_DS = 20 mA
MIN
37.0
6.5
TYP
37.5
7.5
35
1400
2080
-2.5
4.5
MAX
UNITS
dBm
dB
±0.6
dB
%
1800 mA
2880 mA
-4.0
V
5.5
o_C/W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
page 1 of 4
Revised July 2007