EIA1314A-8P Datasheet, PDF (1/1 Pages) Excelics Semiconductor, Inc. – 13.0-14.5GHz, 8W Internally Matched Power FET

Excelics
EIA1314A-8P
Not recommended for new designs. Contact factory. Effective 03/2003
13.0-14.5GHz, 8W Internally Matched Power FET
• 13.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT
IMPEDANCE MATCHED TO 50 OHM
• HIGH PAE(25% TYPICAL)
• +39dBm TYPICAL P_1dB OUTPUT POWER
• 6.5dB TYPICAL G_1dB POWER GAIN
• NON-HERMETIC METAL FLANGE PACKAGE
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P_1dB
G_1dB
PAE
Output Power at 1dB Compression f=13.0-14.5GHz
Vds=8V, Idsq=0.5 Idss
Gain at 1dB Compression
Vds=8V, Idsq=0.5 Idss
f=13.0-14.5GHz
Power Added Efficiency at 1dB compression
f=13.0-14.5GHz Vds=8V, Idsq=0.5 Idss
Id_1dB
IP3
Drain Current at 1dB Compression
Output 3^rd Order Intercept Point f=13.0-14.5GHz
Vds=8V, Idsq=0.5 Idss
Idss
Saturated Drain Current Vds=3V, Vgs=0V
EIA1314A-8P
MIN TYP MAX
38
39
5.5
6.5
25
3520
46
4400 5760 6800
Gm
Transconductance
Vds=3V, Vgs=0V
6000
Vp
Pinch-off Voltage
Vds=3V, Ids=48mA
-1.0 -2.5
BVgd ^{Drain Breakdown Voltage Igd=19.2mA}
-13 -15
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
2.3
UNIT
dBm
dB
%
mA
dBm
mA
mS
V
V
o_C/W
MAXIMUM RATINGS AT 25^OC
SYMBOLS
PARAMETERS
ABSOLUTE¹
Vds
Drain-Source Voltage
12V
Vgs
Gate-Source Voltage
-8V
Ids
Drain Current
Idss
Igsf
Forward Gate Current
720mA
Pin
Input Power
Tch
Channel Temperature
Tstg
Storage Temperature
38dBm
175^oC
-65/175^oC
Pt
Total Power Dissipation
60W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS²
8V
-3V
6240mA
120mA
@ 3dB Compression
150^oC
-65/150^oC
50W
Excelics Semiconductor, Inc., 310 De Guine Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web Site: www.excelics.com