EFE960EV-250P Datasheet, PDF (1/1 Pages) Excelics Semiconductor, Inc. – Low Distortion GaAs Power FET

ISSUED 01/03/2006
EFE960EV-250P
Low Distortion GaAs Power FET
FEATURES
• Non-Hermetic 250mil Metal Flange Package
• +36.5 dBm Typical Output Power
• 15.0 dB Typical Power Gain at 2GHz
• 0.6 x 9600 Micron Recessed “Mushroom”Gate
• Si₃N₄ Passivation
• Advanced Epitaxial Heterojunction Profile
Provides Extra High Power Efficiency and
High Reliability
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T_a = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS
P_1dB
Output Power at 1dB Compression
V_DS = 10 V, I_DS ≈ 50% I_DSS
f = 2GHz
f = 4GHz
G_1dB
PAE
Gain at 1dB Compression
f = 2GHz
V_DS = 10 V, I_DS ≈ 50% I_DSS
f = 4GHz
Power Added Efficiency at 1dB Compression
V_DS = 10 V, I_DS ≈ 50% I_DSS
f = 2GHz
I_DSS
Saturated Drain Current
V_DS = 3 V, V_GS = 0 V
G_M
Transconductance
V_DS = 3 V, V_GS = 0 V
V_P
Pinch-off Voltage
V_DS = 3 V, I_DS = 20 mA
BV_GD Drain Breakdown Voltage
I_GD = 9.6 mA
BV_GS Source Breakdown Voltage I_GS = 9.6 mA
R_TH
Thermal Resistance
* Overall Rth depends on case mounting.
MAXIMUM RATINGS^1,2 (T_a = 25°C)
MIN
35.0
13.5
1500
-19
-10
SYMBOL CHARACTERISTIC
ABSOLUTE
V_DS Drain to Source Voltage
15 V
V_GS Gate to Source Voltage
-5 V
I_DS
Drain Current
Idss
I_GSF
Forward Gate Current
43.2 mA
I_GSR Reverse Gate Current
-7.2 mA
P_IN
Input Power
33.5 dBm
P_T
Total Power Dissipation
25 W
T_CH Channel Temperature
175°C
T_STG Storage Temperature
-65/+175°C
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
TYP
36.5
36.5
15.0
11.0
36
2000
1000
-2.5
-22
-20
5.5*
MAX
2500
-4.0
6.0*
UNITS
dBm
dB
%
mA
mS
V
V
V
o_C/W
CONTINUOUS
10 V
-4 V
2.5 A
14.4 mA
-2.4 mA
@ 3dB compression
25 W
175°C
-65/+175°C
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
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Revised January 2006