EFE960BVR-5759 Datasheet, PDF (1/3 Pages) Excelics Semiconductor, Inc. – 5.70-5.90GHz 4-Watt Partially Matched Power FET

UPDATED 10/26/2006
EFE960BVR-5759
5.70-5.90GHz 4-Watt Partially Matched Power FET
FEATURES
• 5.70-5.90 GHz Bandwidth
• +36.0 dBm Output Power at 1dB Compression
• 9.0 dB Power Gain at 1dB Compression
• 25% Power Added Efficiency
• -46 dBc IM3 at Po = 24.5 dBm SCL
• Non-Hermetic 180 Mil Metal Flange Package
• 100% Tested for DC, RF, and R_TH
ELECTRICAL CHARACTERISTICS (T_a = 25°C)
SYMBOL
P_1dB
G_1dB
PARAMETERS/TEST CONDITIONS¹
Output Power at 1dB Compression
V_DS = 10 V, I_DSQ ≈ 1100mA
Gain at 1dB Compression
V_DS = 10 V, I_DSQ ≈ 1100mA
f = 5.8GHz
f = 5.8GHz
PAE
Id_1dB
IM3
Power Added Efficiency at 1dB Compression
V_DS = 10 V, I_DSQ ≈ 1100mA
f = 5.8GHz
Drain Current at 1dB Compression f = 5.8GHz
Output 3rd Order Intermodulation Distortion
∆f = 10 MHz 2-Tone Test; Pout = 24.5 dBm S.C.L²
V_DS = 10 V, I_DSQ ≈ 65% IDSS
f = 5.8GHz
I_DSS
Saturated Drain Current
V_DS = 3 V, V_GS = 0 V
V_P
Pinch-off Voltage
V_DS = 3 V, I_DS = 20 mA
R_TH
Thermal Resistance³
Caution! ESD sensitive device.
MIN
35.0
8.0
TYP
36.0
9.0
25
1300
MAX
UNITS
dBm
dB
%
1400
mA
-43
-46
dBc
2000
-2.5
5.5
2500
-4.0
6.0
mA
V
o_C/W
Notes: 1. FET TO BE TESTED IN EXCELICS EVALUATION BOARD. DATA REFERS TO EDGES OF PACKAGE.
2. S.C.L. = Single Carrier Level.
3. OVERALL Rth DEPENDS ON CASE MOUNTING.
MAXIMUM RATINGS AT 25^OC
SYMBOLS
PARAMETERS
ABSOLUTE¹
V_DS
V_GS
Igf
Igr
Pin
Tch
Tstg
Pt
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reversed Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
15V
-5V
43.2 mA
-7.2 mA
33 dBm
175^oC
-65/175^oC
25W
CONTINUOUS²
10V
-4.5V
14.4 mA
-2.4 mA
@ 3dB Compression
175^oC
-65/175^oC
25W
Notes:
1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2. Bias conditions must also satisfy the following equation P_T < (T_CH –T_PKG)/R_TH; where T_PKG = temperature of package, and
P_T = (V_DS * I_DS) – (P_OUT – P_IN).
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 3
Phone: [phone] Fax: [phone] Web: www.excelics.com
Revised November 2006