EFC240B-180F Datasheet, PDF (1/1 Pages) Excelics Semiconductor, Inc. – Low Distortion GaAs Power FET

ISSUED 10/04/2006
EFC240B-180F
Low Distortion GaAs Power FET
FEATURES
• NON-HERMETIC 180MIL METAL FLANGE PACKAGE
• +31.0 dBm TYPICAL OUTPUT POWER
• 16.5 dB TYPICAL POWER GAIN AT 2GHz
• 0.3 x 2400 MICRON RECESSED “MUSHROOM” GATE
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
ELECTRICAL CHARACTERISTICS (T_a = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS¹
P_1dB
Output Power at 1dB Compression
V_DS = 10 V, I_DS ≈ 50% I_DSS
f = 2GHz
f = 4GHz
G_1dB
PAE
Gain at 1dB Compression
f = 2GHz
V_DS = 10 V, I_DS ≈ 50% I_DSS
f = 4GHz
Power Added Efficiency at 1dB Compression
V_DS = 10 V, I_DS ≈ 50% I_DSS
f = 2GHz
I_DSS
Saturated Drain Current
V_DS = 3 V, V_GS = 0 V
G_M
Transconductance
V_DS = 3 V, V_GS = 0 V
V_P
Pinch-off Voltage
V_DS = 3 V, I_DS = 6 mA
BV_GD Drain Breakdown Voltage
I_GD = 2.4 mA
BV_GS Source Breakdown Voltage I_GS = 2.4 mA
R_th
Thermal Resistance
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25^OC
SYMBOLS
PARAMETERS
ABSOLUTE¹
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
Igf
Forward Gate Current
15V
5V
10.8mA
Igr
Reverse Gate Current
-1.8mA
Pin
Tch
Tstg
Input Power
Channel Temperature
Storage Temperature
29dBm
175^oC
-65/175^oC
Pt
Total Power Dissipation
6W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Caution! ESD sensitive device.
MIN
TYP
MAX UNITS
29.0
31.0
31.0
dBm
15.0
16.5
11.5
dB
40
%
320
520
720
mA
200
280
mS
-2.5
-4.0
V
-18
-20
V
-10
-17
22*
V
o_C/W
CONTINUOUS²
10V
-4.5V
3.6mA
-0.6mA
@ 3dB Compression
175^oC
-65/175^oC
6W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
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Revised October 2006