EFB025A Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – General Purpose GaAs FET

Excelics
EFB025A
PRELIMINARY DATA SHEET
General Purpose GaAs FET
• +18.5dBm TYPICAL OUTPUT POWER
• 11.0dB TYPICAL POWER GAIN AT 12GHz
420
50 104
• TYPICAL 1.3 dB NOISE FIGURE AND 11 dB ASSOCIATED
GAIN AT 12GHz
D
D
48
• 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE
260
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE
40
SG
GS
90
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
59 50 78
• Idss SORTED IN 5mA PER BIN RANGE
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN
TYP
MAX
UNIT
P1dB
Output Power at 1dB Compression
f=12GHz
17
18.5
dBm
Vds=6V, Ids=50% Idss
f=18GHz
18.5
G1dB
Gain at 1dB Compression
f=12GHz
9
11
dB
Vds=6V, Ids=50% Idss
f=18GHz
9
NF
GA
Idss
Gm
Vp
BVgd
BVgs
Rth
Noise Figure Vds=3V,Ids=15mA
f=12GHz
Associated Gain Vds=3V,Ids=15mA f=12GHz
Saturated Drain Current Vds=3V, Vgs=0V
Transconductance
Vds=3V, Vgs=0V
Pinch-off Voltage
Vds=3V, Ids=1.0mA
Drain Breakdown Voltage Igd=100uA
Source Breakdown Voltage Igs=100uA
Thermal Resistance (Au-Sn Eutectic Attach)
1.3
dB
11
dB
35
65
105
mA
40
60
mS
-1.5
-3.0
V
-5.5
-8.5
V
-5.5
-8.5
155
V
o_C/W
MAXIMUM RATINGS AT 25^OC
SYMBOLS PARAMETERS
ABSOLUTE¹ CONTINUOUS²
Vds
Drain-Source Voltage
10V
6V
Vgs
Gate-Source Voltage
-6V
-4V
Ids
Drain Current
Idss
Idss
Igsf
Forward Gate Current
6mA
1mA
Pin
Input Power
16dBm
Tch
Channel Temperature
175^oC
Tstg
Storage Temperature
-65/175^oC
@ 3dB Compression
150^oC
-65/150^oC
Pt
Total Power Dissipation
880mW
730mW
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com