EFA960CR-CP083 Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – Low Distortion GaAs Power FET

UPDATED 05/19/2006
EFA960CR-CP083
Low Distortion GaAs Power FET
FEATURES
• NON-HERMETIC SURFACE MOUNT
160MIL METAL CERAMIC PACKAGE
• +36.0dBm OUTPUT POWER
• 15.5 dB TYPICAL POWER GAIN AT 2 GHz
• 0.5x9600 MICRON RECESSED “MUSHROOM” GATE
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL HETEROJUNCTION PROFLIE
PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH
RELIABILITY
2X .065
±.015
.075
.220 .200
.290±0.005
.160
.096
.010 MAX
.050
.008±0.001
All Dimensions in Inches
ELECTRICAL CHARACTERISTICS (T_a = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETER/TEST CONDITIONS
MIN TYP MAX UNITS
P_1dB
G_1dB
PAE
I_DSS
Output Power at 1dB Compression
f = 2.0 GHz
Vds = 8 V, Ids=50% Idss
f = 4.0 GHz
Gain at 1dB Compression
f = 2.0 GHz
Vds = 8 V, Ids=50% Idss
f = 4.0 GHz
Power Added Efficiency at 1dB Compression
Vds = 8 V, Ids=50% Idss
f = 2.0 GHz
Saturated Drain Current
V_DS = 3 V, V_GS = 0 V
34.5
14.0
1600
36.0
36.0
15.5
10.5
30
2720
3520
dBm
dB
%
mA
G_M
Transconductance
V_DS = 3 V, V_GS = 0 V
1100 1450
mS
V_P
Pinch-off Voltage
V_DS = 3 V, I_DS = 27 mA
-2.0
-3.5
V
BV_GD
Drain Breakdown Voltage
I_GD = 9.6 mA
-13
-15
V
BV_GS
Source Breakdown Voltage
I_GS = 9.6 mA
-7
-14
V
R_TH*
Thermal Resistance
Notes: * Overall Rth depends on case mounting.
6*
o_C/W
MAXIMUM RATINGS AT 25^OC
SYMBOLS
PARAMETERS
ABSOLUTE¹
Vds
Drain-Source Voltage
10V
Vgs
Gate-Source Voltage
-5V
Igsf
Forward Gate Current
43.2 mA
Igsr
Reverse Gate Current
-7.2 mA
Pin
Tch
Tstg
Input Power
Channel Temperature
Storage Temperature
33 dBm
175^oC
-65/175^oC
Pt
Total Power Dissipation
23 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS²
8V
-4V
14.4 mA
-2.4 mA
@ 3dB Compression
175^oC
-65/175^oC
23 W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
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Revised May 2006