EFA720AV-CP083 Datasheet, PDF (1/1 Pages) Excelics Semiconductor, Inc. – Low Distortion GaAs Power FET

UPDATED 01/30/2006
EFA720AV-CP083
Low Distortion GaAs Power FET
FEATURES
• NON-HERMETIC SURFACE MOUNT
160MIL METAL CERAMIC PACKAGE
• +33.5dBm OUTPUT POWER
• 17.0 dB TYPICAL POWER GAIN AT 2 GHz
• 0.5x4800 MICRON RECESSED “MUSHROOM” GATE
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL HETEROJUNCTION PROFLIE
PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH
RELIABILITY
All Dimensions in mil
Tolerance: ± 3 mil
ELECTRICAL CHARACTERISTICS (T_a = 25°C)
SYMBOL
PARAMETER/TEST CONDITIONS
P_1dB
G_1dB
PAE
I_DSS
Output Power at 1dB Compression
f = 2.0 GHz
Vds = 8 V, Ids=50% Idss
f = 4.0 GHz
Gain at 1dB Compression
f = 2.0 GHz
Vds = 8 V, Ids=50% Idss
f = 4.0 GHz
Power Added Efficiency at 1dB Compression
Vds = 8 V, Ids=50% Idss
f = 2.0 GHz
Saturated Drain Current
V_DS = 3 V, V_GS = 0 V
G_M
Transconductance
V_DS = 3 V, V_GS = 0 V
V_P
Pinch-off Voltage
V_DS = 3 V, I_DS = 10 mA
BV_GD
Drain Breakdown Voltage
I_GD = 7.2 mA
BV_GS
Source Breakdown Voltage
I_GS = 7.2 mA
R_TH*
Thermal Resistance
Notes: * Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25^OC
SYMBOLS
PARAMETERS
Vds
Drain-Source Voltage
Vgs
Gate-Source Voltage
Igsf
Forward Gate Current
Igsr
Reserve Gate Current
Pin
Input Power
Tch
Channel Temperature
Tstg
Storage Temperature
Pt
Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
ABSOLUTE¹
12V
-5V
32.4 mA
5.4 mA
32.5 dBm
175^oC
-65/175^oC
20 W
Caution! ESD sensitive device.
MIN
33.5
15.5
1200
840
-13
-7
TYP
35.5
35.5
17.0
12.0
36
2040
1100
-2.0
-15
-14
6*
MAX UNITS
2640
-3.5
dBm
dB
%
mA
mS
V
V
V
o_C/W
CONTINUOUS²
8V
-3V
10.8 mA
1.8 mA
@ 3dB Compression
175^oC
-65/175^oC
20 W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
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Revised January 2006