EFA720A Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Low Distortion GaAs Power FET

Excelics
EFA720A
DATA SHEET
Low Distortion GaAs Power FET
• +35.5dBm TYPICAL OUTPUT POWER
• 17.5dB TYPICAL POWER GAIN AT 2GHz
• 0.5 X 7200 MICRON RECESSED
“MUSHROOM” GATE
• Si₃N₄ PASSIVATION AND PLATED HEAT SINK
• ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
• Idss SORTED IN 120mA PER BIN RANGE

 
'
'
'



6
*
6
*
 

6
*
6

Chip Thickness: 50 ± 10 microns
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
(with > 20 microns Gold Plated Heat Sink (PHS) )
All Dimensions In Microns
SYMBOLS
P_1dB
G_1dB
PAE
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
Gain at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f= 2GHz
MIN
33.5
16.0
TYP
35.5
35.5
17.5
12.5
36
MAX UNIT
dBm
dB
%
Idss
Saturated Drain Current Vds=3V, Vgs=0V
1200 2040 2640 mA
Gm
Transconductance
Vds=3V, Vgs=0V
840 1100
mS
Vp
Pinch-off Voltage
Vds=3V, Ids=20mA
-2.0 -3.5 V
BVgd
Drain Breakdown Voltage Igd=7.2mA
-12 -15
V
BVgs
Source Breakdown Voltage Igs=7.2mA
-7 -14
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
6
MAXIMUM RATINGS AT 25^OC
SYMBOLS PARAMETERS
ABSOLUTE ¹ CONTINUOUS²
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-4V
Ids
Drain Current
Idss
2.4A
Igsf
Forward Gate Current
180mA
30mA
Pin
Input Power
34dBm
Tch
Channel Temperature
175^oC
Tstg
Storage Temperature
-65/175^oC
@3dB Compression
150^oC
-65/150^oC
Pt
Total Power Dissipation
23 W
19 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
V
o_C/W
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com