EFA480C-CP083 Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – Low Distortion GaAs Power FET

UPDATED 12/28/2004
EFA480C-CP083
Low Distortion GaAs Power FET
FEATURES
• NON-HERMETIC SURFACE MOUNT
160MIL METAL CERAMIC PACKAGE
• +33.5 dBm OUTPUT POWER AT 1dB COMPRESSION
• 16.0 dB GAIN AT 2 GHz
• 0.5x4800 MICRON RECESSED “MUSHROOM” GATE
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL HETEROJUNCTION PROFILE
PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH
RELIABILITY
All Dimensions in mil
Tolerance: ± 3 mil
ELECTRICAL CHARACTERISTICS (T_a = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETER/TEST CONDITIONS
MIN TYP MAX UNITS
P_1dB
G_1dB
PAE
I_DSS
Output Power at 1dB Compression
f = 2.0 GHz
Vds = 8 V, Ids=50% Idss
f = 4.0 GHz
Gain at 1dB Compression
f = 2.0 GHz
Vds = 8 V, Ids=50% Idss
f = 4.0 GHz
Power Added Efficiency at 1dB Compression
Vds = 8 V, Ids=50% Idss
f = 2.0 GHz
Saturated Drain Current
V_DS = 3 V, V_GS = 0 V
32.0 33.5
33.5
14.5 16.0
11.0
35
dBm
dB
%
800 1360 1760 mA
G_M
Transconductance
V_DS = 3 V, V_GS = 0 V
560
720
mS
V_P
Pinch-off Voltage
V_DS = 3 V, I_DS = 10 mA
-2.0
-3.5
V
BV_GD
Drain Breakdown Voltage
I_GD = 4.8 mA
-12
-15
V
BV_GS
Source Breakdown Voltage
R_TH*
Thermal Resistance
Notes: * Overall Rth depends on case mounting.
I_GS = 4.8 mA
-7
-14
14*
V
o_C/W
MAXIMUM RATINGS AT 25^OC
SYMBOLS
PARAMETERS
ABSOLUTE¹
Vds
Drain-Source Voltage
12V
Vgs
Gate-Source Voltage
-8V
Ids
Drain Current
Idss
Igsf
Forward Gate Current
120mA
Pin
Input Power
Tch
Channel Temperature
Tstg
Storage Temperature
32dBm
175^oC
-65/175^oC
Pt
Total Power Dissipation
9.7W
Note: 1 Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS²
8V
-4.0V
1.0A
20mA
@ 3dB Compression
150 ^oC
-65/150 ^oC
8.1W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
page 1 of 2
Revised January 2005