EFA480C-180F Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – Low Distortion GaAs Power FET

Excelics
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
EFA480C-180F
• NON-HERMETIC 180MIL METAL FLANGE PACKAGE
• +34.0dBm TYPICAL OUTPUT POWER
• 16.5dB TYPICAL POWER GAIN AT 2GHz
• 0.5 X 4800 MICRON RECESSED
“MUSHROOM” GATE
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P_1dB
G_1dB
PAE
Output Power at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
Gain at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=2GHz
Idss
Saturated Drain Current Vds=3V, Vgs=0V
All Dimensions In Mils
MIN
32.0
15.0
800
TYP
34.0
34.0
16.5
11.5
40
1360
MAX UNIT
dBm
dB
%
1760 mA
Gm
Transconductance
Vds=3V, Vgs=0V
560 720
mS
Vp
Pinch-off Voltage
Vds=3V, Ids=10mA
-2.0 -3.5 V
BVgd
Drain Breakdown Voltage Igd=4.8mA
-12 -15
V
BVgs
Source Breakdown Voltage Igs=4.8mA
-7 -14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
12*
o_C/W
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25^OC
SYMBOLS PARAMETERS
ABSOLUTE¹
CONTINUOUS²
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-4V
Ids
Drain Current
Idss
1.2A
Igsf
Forward Gate Current
120mA
20mA
Pin
Input Power
Tch
Channel Temperature
Tstg
Storage Temperature
32dBm
175^oC
-65/175^oC
@ 3dB Compression
150^oC
-65/150^oC
Pt
Total Power Dissipation
11.4W
9.5W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com